Low threshold room temperature continuous wave operation of 1.3 [micro sign]m GaInAsP/InP strained layer multiquantum well surface emitting laser

S. Uchiyama; N. Yokouchi; T. Ninomiya

doi:10.1049/el:19960676

Low threshold room temperature continuous wave operation of 1.3 [micro sign]m GaInAsP/InP strained layer multiquantum well surface emitting laser

Electronics Letters ◽

10.1049/el:19960676 ◽

1996 ◽

Vol 32 (11) ◽

pp. 1011 ◽

Cited By ~ 7

Author(s):

S. Uchiyama ◽

N. Yokouchi ◽

T. Ninomiya

Keyword(s):

Room Temperature ◽

Continuous Wave ◽

Strained Layer ◽

Continuous Wave Operation ◽

Surface Emitting Laser ◽

Low Threshold ◽

Multiquantum Well

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Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser

10.1117/12.43836 ◽

1991 ◽

Author(s):

Y. J. Yang ◽

Thaddeus G. Dziura ◽

S. C. Wang ◽

Mr. R. Fernandez ◽

G. Du ◽

...

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Continuous Wave ◽

Single Quantum ◽

Single Quantum Well ◽

Continuous Wave Operation ◽

Structure Surface ◽

Surface Emitting Laser ◽

Low Threshold

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Low-threshold continuous-wave operation of an oxide-confined vertical-cavity surface-emitting laser based on a quantum dot active region and half-wave cavity

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C ◽

10.1109/leosst.1997.619092 ◽

2002 ◽

Author(s):

D.L. Huffaker ◽

L.A. Graham ◽

M.R. McDaniel ◽

D.G. Deppe

Keyword(s):

Active Region ◽

Quantum Dot ◽

Continuous Wave ◽

Cavity Surface ◽

Half Wave ◽

Continuous Wave Operation ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold

Scientific Reports ◽

10.1038/srep05014 ◽

2014 ◽

Vol 4 (1) ◽

Cited By ~ 33

Author(s):

Y. Hou ◽

P. Renwick ◽

B. Liu ◽

J. Bai ◽

T. Wang

Keyword(s):

Room Temperature ◽

Continuous Wave ◽

Operation Mode ◽

Continuous Wave Operation ◽

Low Threshold

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BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

Applied Physics Letters ◽

10.1063/1.4934359 ◽

2015 ◽

Vol 107 (16) ◽

pp. 161101 ◽

Cited By ~ 4

Author(s):

Jijun Feng ◽

Ryoichi Akimoto

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Ridge Waveguide ◽

Waveguide Laser ◽

Continuous Wave Operation ◽

Low Threshold ◽

Ridge Waveguide Laser

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Room-temperature, continuous-wave operation for mode-stabilised AlGaInP visible-light semiconductor laser with a multiquantum-well active layer

Electronics Letters ◽

10.1049/el:19881016 ◽

1988 ◽

Vol 24 (24) ◽

pp. 1489 ◽

Cited By ~ 13

Author(s):

S. Kawata ◽

K. Kobayashi ◽

H. Fujii ◽

I. Hino ◽

A. Gomyo ◽

...

Keyword(s):

Visible Light ◽

Semiconductor Laser ◽

Active Layer ◽

Room Temperature ◽

Continuous Wave ◽

Continuous Wave Operation ◽

Multiquantum Well

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Room-temperature continuous-wave operation of GaAs-based vertical cavity surface emitting laser based on p-type GaAs∕air mirror

Electronics Letters ◽

10.1049/el:20030309 ◽

2003 ◽

Vol 39 (6) ◽

pp. 525

Author(s):

Q. Mo ◽

H. Chen ◽

Z. Huang ◽

O.B. Shchekin ◽

C. Cao ◽

...

Keyword(s):

Room Temperature ◽

Continuous Wave ◽

Cavity Surface ◽

Continuous Wave Operation ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

P Type ◽

Vertical Cavity

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Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

Electronics Letters ◽

10.1049/el:19981063 ◽

1998 ◽

Vol 34 (15) ◽

pp. 1494 ◽

Cited By ~ 31

Author(s):

T. Kobayashi ◽

F. Nakamura ◽

K. Naganuma ◽

T. Tojyo ◽

H. Nakajima ◽

...

Keyword(s):

Laser Diode ◽

Room Temperature ◽

Continuous Wave ◽

Continuous Wave Operation ◽

Multiquantum Well

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Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity

Electronics Letters ◽

10.1049/el:19970825 ◽

1997 ◽

Vol 33 (14) ◽

pp. 1225 ◽

Cited By ~ 18

Author(s):

D.L. Huffaker ◽

L.A. Graham ◽

D.G. Deppe

Keyword(s):

Active Region ◽

Quantum Dot ◽

Continuous Wave ◽

Cavity Surface ◽

Half Wave ◽

Continuous Wave Operation ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Room temperature continuous wave low threshold current ion implanted vertical cavity surface emitting laser using tungsten wires as mask

Optics & Laser Technology ◽

10.1016/s0030-3992(03)00012-4 ◽

2003 ◽

Vol 35 (5) ◽

pp. 341-344 ◽

Cited By ~ 1

Author(s):

Haisong Wang ◽

Guotong Du ◽

Hongfeng Cui ◽

Chengdong Xu ◽

Junfeng Song

Keyword(s):

Room Temperature ◽

Continuous Wave ◽

Threshold Current ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity ◽

Ion Implanted

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Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content

Electronics Letters ◽

10.1049/el:19990679 ◽

1999 ◽

Vol 35 (12) ◽

pp. 998 ◽

Cited By ~ 2

Author(s):

A. Tsujimura ◽

Y. Hasegawa ◽

A. Ishibashi ◽

S. Kamiyama ◽

I. Kidoguchi ◽

...

Keyword(s):

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Indium Content ◽

Continuous Wave Operation ◽

Multiquantum Well

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