Observation of stimulated emission, line narrowing, and red shift of emission peak from optically-pumped rectangular cross-sectional GaN optical waveguides fabricated by selective growth

1996 ◽  
Vol 32 (1) ◽  
pp. 34 ◽  
Author(s):  
T. Tanaka ◽  
K. Uchida ◽  
A. Watanabe ◽  
S. Minagawa
Keyword(s):  
Emission Line ◽  
Optical Waveguides ◽  
Selective Growth ◽  
Emission Peak ◽  
Stimulated Emission ◽  
Red Shift ◽  
Optically Pumped ◽  
Cross Sectional ◽  
Line Narrowing

Laser Oscillation in Aggregates of Ultrasmall Si Nanoparticles

2002 ◽  
Vol 728 ◽  
Author(s):  
Munir H. Nayfeh
Keyword(s):  
Stimulated Emission ◽  
Gaussian Beams ◽  
Single Particles ◽  
Nonlinear Characteristics ◽  
Femtosecond Radiation ◽  
Highly Nonlinear ◽  
Line Narrowing ◽  
Si Nanoparticles ◽  
Speckle Patterns ◽  
Spectral Line Narrowing

AbstractWe dispersed electrochemically etched Si into ultrabright ultrasmall nanoparticles, with brightness higher than fluorescein or rhodamine. The emission from single particles is readily detectable. Aggregates or films of the particles exhibit emission with highly nonlinear characteristics. We observe directed blue beams at ∼ 410 nm between faces of aggregates excited by femtosecond radiation at 780 nm; and at ∼ 610 nm from aggregates of red luminescent Si nanoparticles excited by radiation at 550-570 nm from a mercury lamp. Intense directed Gaussian beams, a pumping threshold, spectral line narrowing, and speckle patterns manifest the emission. The results are analyzed in terms of population inversion and stimulated emission in quantum confinement-induced Si-Si dimer phase, found only on ultrasmall Si nanoparticles. This microlasing constitutes an important step towards the realization of a laser on a chip.

Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown $a$-Plane GaN

2011 ◽  
Vol 4 (8) ◽  
pp. 082103 ◽  
Author(s):  
Mohamed Lachab ◽  
Krishnan Balakrishnan ◽  
Bin Zhang ◽  
Joe Dion ◽  
Qhalid Fareed ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped

Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

2013 ◽  
Vol 210 (9) ◽  
pp. 1768-1770 ◽  
Author(s):  
Zachary Lochner ◽  
Xiao-Hang Li ◽  
Tsung-Ting Kao ◽  
Md. Mahbub Satter ◽  
Hee Jin Kim ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Optically Pumped

Terahertz light amplification by stimulated emission of radiation from optically pumped graphene

2011 ◽  
Author(s):  
Taiichi Otsuji ◽  
Stephane A. Boubanga Tombet ◽  
Silvia Chan ◽  
Akira Satou ◽  
Victor Ryzhii
Keyword(s):  
Stimulated Emission ◽  
Optically Pumped ◽  
Light Amplification

ECR-MBE and GSMBE of Gallium nitride on Si(111)

1995 ◽  
Vol 395 ◽  
Author(s):  
U. Rossner ◽  
J.-L. Rouviere ◽  
A. Bourret ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
High Energy ◽  
Emission Peak ◽  
Growth Mode ◽  
Cross Sectional ◽  
Dimensional Growth

ABSTRACTElectron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium.By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640°C while three dimensional growth occured in GSMBE configuration in the temperature range from 640 to 800°C.Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples grown by GSMBE at high temperature (800°C). This could be explained by the increase of grain dimensions (up to 0,3 – 0,5 μm) observed in samples grown by GSMBE at 800°C.

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