Nitrogen doped silica core fibres: A new type of radiation-resistant fibre

1995 ◽  
Vol 31 (17) ◽  
pp. 1490-1491 ◽  
Author(s):  
E.M. Dianov ◽  
R.R. Khrapko ◽  
A.L. Tomashuk ◽  
K.M. Golant
Keyword(s):  
Nitrogen Doped ◽  
Radiation Resistant ◽  
New Type ◽  
Silica Core ◽  
Resistant Fibre

scholarly journals Radiation-resistant low OH content silica core fibers

1983 ◽  
Vol 1 (3) ◽  
pp. 462-465 ◽  
Author(s):  
E. Friebele ◽  
M. Gingerich ◽  
K. Long ◽  
P. Levin ◽  
D. Pinnow
Keyword(s):  
Radiation Resistant ◽  
Silica Core ◽  
Oh Content

Utlra-Thermostable Long-Period Gratings Written in Nitrogen-Doped Silica Fibers

1998 ◽  
Vol 531 ◽  
Author(s):  
V. I. Karpov ◽  
M. V. Grekov ◽  
E. M. Dianov ◽  
K. M. Golant ◽  
R. R. Khrapko
Keyword(s):  
Refractive Index ◽  
Optical Fibers ◽  
Effective Refractive Index ◽  
Nitrogen Doped ◽  
Fiber Core ◽  
Long Period ◽  
Silica Fibers ◽  
Long Period Gratings ◽  
Silica Core

AbstractLong-period gratings were written in nitrogen-doped-silica-core optical fibers by point heating. The periodic variations of the effective refractive index were induced via diffusion of nitrogen from the fiber core. It is shown experimentally that such gratings remain functional at temperatures of up to 1200 °C.

Fabrication of nitrogen-doped titanium oxide/silica core–shell particles and their electrical conductivity

2014 ◽  
Vol 457 ◽  
pp. 244-249 ◽  
Author(s):  
Yoshio Kobayashi ◽  
Toshio Iwasaki ◽  
Kensuke Kageyama ◽  
Shigeki Ishikuro ◽  
Kazuhiko Yamasaki ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Titanium Oxide ◽  
Core Shell ◽  
Nitrogen Doped ◽  
Silica Core ◽  
Shell Particles

InZnON-based Thin Film Transistor for the Development of New Type Photo Detec-tors with a Colloidal Quantum Dots Sensitive Layer

2020 ◽  
Vol 22 (8) ◽  
pp. 452-460
Author(s):  
A.B. Cheremisin ◽  
◽  
S.A. Macegor ◽  
D.M. Puzanov ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Thin Film Transistor ◽  
Monochromatic Light ◽  
Colloidal Quantum Dots ◽  
Pure Oxygen ◽  
Semiconductor Layer ◽  
Sensitive Layer ◽  
Nitrogen Doped ◽  
New Type

Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. In present work, we propose rather simple way to fabricate nitrogen doped InZnO-based TFT by DC reactive magnetron sputtering technique. The moderate nitrogen doping of the channel's semiconductor layer is studied in terms of the reproducibility and stability device's electrical characteristics. When nitrogen concentration in gas mix reaches the upper level of 71 % the best TFT parameters are achieved such as VON = -0.3 V, μ = 12 cm2/Vs, SS = 0.5 V/dec. The TFTs operate in depletion mode exhibiting high turn on/turn off current ratio more than 106. It is shown that the oxidative post-fabrication annealing at 250 °C in pure oxygen and next ageing in dry air for several hours provide highly stable operational characteristics under negative and positive bias stresses despite open channel backside. The prospects of using the thin-film transistor for the new type of photo detectors with a colloidal quantum dots (CQDs) sensitive layer are demonstrated. The solution-cast colloidal-quantum-dots were decorated on the nitrogen doped InZnO layer by spin-coating method. N-type CdSe/ZnS CQDs modified by the ligand (pyridine) are utilized as electron donor to inject electron to the channel layer. Higher photocurrent responsibility about 104 A/W at incident monochromatic light 405 nm is reached for hybrid phototransistor.

Behavior of developed radiation-resistant silica-core optical fibers under fission reactor irradiation

2000 ◽  
Vol 51-52 ◽  
pp. 179-183 ◽  
Author(s):  
Tatsuo Shikama ◽  
Tsunemi Kakuta ◽  
Naoki Shamoto ◽  
Minoru Narui ◽  
Tsutomu Sagawa
Keyword(s):  
Optical Fibers ◽  
Reactor Irradiation ◽  
Fission Reactor ◽  
Radiation Resistant ◽  
Silica Core
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