Self-aligned flip-chip packaging of tilted semiconductor optical amplifier arrays on Si motherboard

1995 ◽  
Vol 31 (6) ◽  
pp. 488-490 ◽  
Author(s):  
W. Hunziker ◽  
R. Ngo ◽  
G. Laube ◽  
F. Pommereau ◽  
H. Melchior ◽  
...  
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Flip Chip ◽  
Optical Amplifier ◽  
Flip Chip Packaging

High-performance semiconductor optical amplifier array for self-aligned packaging using Si V-groove flip-chip technique

1995 ◽  
Vol 7 (5) ◽  
pp. 476-478 ◽  
Author(s):  
D. Leclerc ◽  
P. Brosson ◽  
F. Pommereau ◽  
R. Ngo ◽  
P. Doussiere ◽  
...  
Keyword(s):  
Semiconductor Optical Amplifier ◽  
High Performance ◽  
Flip Chip ◽  
Optical Amplifier

Frequency Encoded All Optical Tri-state Logic Gates NOT and NAND Using Semiconductor Optical Amplifier Based Interferometric Switches

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Power ◽  
Logic Gates ◽  
Optical Amplifier ◽  
All Optical ◽  
State Frequency ◽  
Spontaneous Noise ◽  
First Time ◽  
Practical Feasibility

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.

Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ashif Raja ◽  
Kousik Mukherjee ◽  
Jitendra Nath Roy
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Contrast Ratio ◽  
Optical Amplifier ◽  
Majority Voting ◽  
Polarization Rotation ◽  
All Optical ◽  
Eye Opening ◽  
Amplified Spontaneous Emission Noise ◽  
Quality Factor Q

Abstract Semiconductor optical amplifier-based polarization rotation is utilized in designing all-optical AND gate at 100 Gbps. The AND gate shows high extinction ratio (ER ∼ 15 dB), contrast ratio (CR ∼ 18 dB) and quality factor (Q-factor ∼ 16 dB). The effect of the amplified spontaneous emission noise on the performances is also investigated. The AND gate has relative eye opening (REO) varying from 93.52 to 97.1% for 10–30 dB unsaturated gain. Using the AND gate a majority voting gate is designed and analyzed and has Q ∼ 11.7 dB with REO ∼ 91%.

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