Absolute voltage measurements on III-V integrated circuits by internal electro-optic sampling

1995 ◽  
Vol 31 (1) ◽  
pp. 23-24 ◽  
Author(s):  
L. Duvillaret ◽  
J.-M. Lourtioz ◽  
L. Chusseau
Keyword(s):  
Integrated Circuits ◽  
Electro Optic

Gate propagation delay and logic timing of GaAs integrated circuits measured by electro-optic sampling

1986 ◽  
Vol 22 (9) ◽  
pp. 499 ◽  
Author(s):  
M.J.W. Rodwell ◽  
K.J. Weingarten ◽  
J.L. Freeman ◽  
D.M. Bloom
Keyword(s):  
Integrated Circuits ◽  
Propagation Delay ◽  
Electro Optic

Electro‐optic sampling of high‐speed silicon integrated circuits using a GaAs probe tip

1991 ◽  
Vol 59 (2) ◽  
pp. 146-148 ◽  
Author(s):  
Michael S. Heutmaker ◽  
George T. Harvey ◽  
Philip F. Bechtold
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Electro Optic ◽  
Silicon Integrated Circuits

Electro-Optic Sampler For Gallium Arsenide Integrated Circuits

1985 ◽  
Author(s):  
B. H. Kolner ◽  
K. J. Weingarten ◽  
D. M. Bloom
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Electro Optic

scholarly journals A compact plasmonic MOS-based 2×2 electro-optic switch

Nanophotonics ◽  
2015 ◽  
Vol 4 (3) ◽  
pp. 261-268 ◽  
Author(s):  
Chenran Ye ◽  
Ke Liu ◽  
Richard A. Soref ◽  
Volker J. Sorger
Keyword(s):  
Integrated Circuits ◽  
Indium Tin Oxide ◽  
Low Cost ◽  
Extinction Ratio ◽  
Polarized Light ◽  
Transverse Magnetic ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Seamless Integration ◽  
Electro Optic

Abstract We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

scholarly journals Photonic Quantum Noise Reduction with Low-Pump Parametric Amplifiers for Photonic Integrated Circuits

2016 ◽  
Author(s):  
Andre Vatarescu
Keyword(s):  
Integrated Circuits ◽  
Quantum Noise ◽  
Photonic Devices ◽  
Small Scale ◽  
Parametric Amplifiers ◽  
Electro Optic ◽  
Parametric Processes ◽  
Scale Integration ◽  
Signal Field ◽  
Related Phase

An approximation-free and fully quantum optic formalism for parametric processes is presented. Phase-dependent gain coefficients and related phase-pulling effects are identified for quantum Rayleigh emission and the electro-optic conversion of photons providing parametric amplification in small scale integration of photonic devices. These mechanisms can be manipulated to deliver, simultaneously, sub-Poissonian distributions of photons as well as phase-dependent amplification in the same optical quadrature of a signal field.

scholarly journals Demonstration of electro-optic half-adder using silicon photonic integrated circuits

2014 ◽  
Vol 22 (6) ◽  
pp. 6958 ◽  
Author(s):  
Yonghui Tian ◽  
Lei Zhang ◽  
Jianfeng Ding ◽  
Lin Yang
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Electro Optic ◽  
Silicon Photonic ◽  
Half Adder
Sign in / Sign up

Export Citation Format

Share Document