1.3 µm wavelength, low-threshold strained quantum well laser on p-type substrate

1994 ◽  
Vol 30 (16) ◽  
pp. 1292-1293 ◽  
Author(s):  
H. Nobuhara ◽  
K. Wakao ◽  
K. Tanaka ◽  
T. Odagawa ◽  
T. Inoue ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Strained Quantum Well ◽  
P Type

Extremely wide modulation bandwidth in a low threshold current strained quantum well laser

1988 ◽  
Vol 53 (15) ◽  
pp. 1378-1380 ◽  
Author(s):  
I. Suemune ◽  
L. A. Coldren ◽  
M. Yamanishi ◽  
Y. Kan
Keyword(s):  
Quantum Well ◽  
Threshold Current ◽  
Modulation Bandwidth ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Strained Quantum Well

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum‐well laser diodes

1994 ◽  
Vol 64 (2) ◽  
pp. 158-160 ◽  
Author(s):  
Hidenao Tanaka ◽  
Jun‐ichi Shimada ◽  
Yoshio Suzuki
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Mode Switching ◽  
Quantum Well Laser ◽  
Highly Efficient ◽  
Tm Mode ◽  
Strained Quantum Well
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