Electron saturation velocity in Ga0.5Inp0.5P measured in a GaInP/GaAs/GaInP double-heterojunction bipolar transistor

1993 ◽  
Vol 29 (21) ◽  
pp. 1885 ◽  
Author(s):  
W. Liu ◽  
T. Henderson ◽  
E. Beam ◽  
S.-K. Fan
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Saturation Velocity ◽  
Double Heterojunction

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

A THz InGaAs/InP double heterojunction bipolar transistor withfmax= 325 GHz and BVCBO= 10.6 V

2013 ◽  
Vol 34 (5) ◽  
pp. 054006 ◽  
Author(s):  
Wei Cheng ◽  
Yuan Wang ◽  
Yan Zhao ◽  
Haiyan Lu ◽  
Hanchao Gao ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction
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