Multiwavelength laser array by chemical beam epitaxy on patterned InP substrates

1993 ◽  
Vol 29 (9) ◽  
pp. 763 ◽  
Author(s):  
R.M. Kapre ◽  
W.T. Tsang ◽  
Y.K. Chen ◽  
A.M. Sergent
Keyword(s):  
Chemical Beam Epitaxy ◽  
Laser Array ◽  
Inp Substrates ◽  
Multiwavelength Laser

Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates

1993 ◽  
Vol 8 (6) ◽  
pp. 1063-1068 ◽  
Author(s):  
H Sugiura ◽  
A Rudra ◽  
J F Carlin ◽  
H J Buhlmann ◽  
D Araujo ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Inp Substrates

MULTIWAVELENGTH LIGHT SOURCE WITH INTEGRATED DFB LASER ARRAY AND STAR COUPLER FOR WDM LIGHTWAVE COMMUNICATIONS

1994 ◽  
Vol 05 (01) ◽  
pp. 91-109 ◽  
Author(s):  
C.E. ZAH ◽  
J. GAMELIN ◽  
B. PATHAK ◽  
F. FAVIRE ◽  
P.S.D. LIN ◽  
...  
Keyword(s):  
Low Cost ◽  
Single Mode ◽  
Cost Effective ◽  
Single Mode Fiber ◽  
Laser Source ◽  
Photonic Integration ◽  
Laser Array ◽  
Laser Arrays ◽  
Wavelength Division ◽  
Multiwavelength Laser

We discuss the advantages of wavelength-division-multiplexed (WDM) lightwave systems and the need for monolithically integrated multiwavelength laser arrays. For WDM light-wave systems to be cost effective, it is important to reduce the per-wavelength component cost. By photonic integration, the packaging and the control circuitry will be shared among all the wavelengths. In this paper, we review the multiwavelength laser arrays, the array coupling, and the photonic integration approach. We have demonstrated the monolithic integration of a 21-wavelength multi-quantum-well distributed-feedback laser array with a star coupler and optical amplifiers on the same chip. Operating a packaged module under CW operation, we obtained as many as 15 individual wavelengths simultaneously launched from one output port of the star coupler of this integrated chip into one lensed single-mode fiber. We also characterized the thermal and the electrical crosstalk from the neighboring lasers. This integrated chip stands a good chance of being a compact and low-cost multiwavelength laser source for future WDM lightwave systems.

One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substrates

1994 ◽  
Vol 136 (1-4) ◽  
pp. 173-178 ◽  
Author(s):  
A. Rudra ◽  
H. Sugiura ◽  
J. Ling ◽  
J.M. Bonard ◽  
J.D. Ganière ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
One Step ◽  
Step Growth ◽  
Inp Substrates

Chemical beam epitaxy of integrated 1.55μm lasers on exact and misoriented (100)-InP substrates

1998 ◽  
Vol 188 (1-4) ◽  
pp. 275-280 ◽  
Author(s):  
A Nutsch ◽  
B Dahlheimer ◽  
N Döhr ◽  
H Kratzer ◽  
R Lukas ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Inp Substrates

Structural investigation of InAs/InGaAs/InP nanostructures: origin and stability of nanowires.

2004 ◽  
Vol 829 ◽  
Author(s):  
L. Nieto ◽  
H. R. Gutiérrez ◽  
J. R. R. Bortoleto ◽  
R. Magalhães-Paniago ◽  
M. A. Cotta
Keyword(s):  
Buffer Layer ◽  
Strain Relaxation ◽  
Additional Stress ◽  
Chemical Beam Epitaxy ◽  
Compositional Modulation ◽  
Transmission Electron ◽  
Inas Nanowires ◽  
Inp Substrates ◽  
Lattice Matched ◽  
Microscopy Images

ABSTRACTIn this letter we present results on the growth of InAs nanowires (NW's) on InGaAs lattice-matched to (100) InP substrates by Chemical Beam Epitaxy. We observed that the nanostructure stability depends on the thickness of the InGaAs layer. This effect may result from two different conditions: the nanostructure strain field depth and/or compositional modulation in the buffer layer. Our investigation shows that anisotropic strain relaxation for nanowires grown on InGaAs is faster than for those grown on InP but the elastic energy in the nanostructures is no different from the InAs/InP case. These results suggest that the InAs strain relaxation does not depend significantly on the InGaAs buffer layer thickness. Nevertheless, transmission electron microscopy images show an additional stress field superimposed on that usually observed for the InAs nanostructures, which is attributed to compositional modulation in the ternary layer.

High-precision channel spacing and balanced output multiwavelength laser array with fine tunability

2021 ◽  
Vol 60 (2) ◽  
pp. 470
Author(s):  
Yongkang Feng ◽  
Yongbing Zhao ◽  
Liangliang Yang ◽  
Xiaohua Wang ◽  
Guoce Zhuang ◽  
...  
Keyword(s):  
High Precision ◽  
Laser Array ◽  
Channel Spacing ◽  
Multiwavelength Laser
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