Electron-beam vapour-deposited erbium-doped glass waveguide laser at 1.53 μm

1992 ◽  
Vol 28 (22) ◽  
pp. 2054 ◽  
Author(s):  
M. Nakazawa ◽  
Y. Kimura
Keyword(s):  
Electron Beam ◽  
Waveguide Laser ◽  
Erbium Doped ◽  
Glass Waveguide ◽  
Doped Glass

Ytterbium-doped glass waveguide laser fabricated by ion exchange

1999 ◽  
Vol 17 (9) ◽  
pp. 1593-1601 ◽  
Author(s):  
C. Florea ◽  
K.A. Winick
Keyword(s):  
Ion Exchange ◽  
Waveguide Laser ◽  
Glass Waveguide ◽  
Doped Glass

Nd3+-Doped Glass Waveguide Laser Operating Around 1.3 μm

1991 ◽  
Author(s):  
Hiroshi Aoki ◽  
Osamu Maruyama ◽  
Yoshiyuki Asahara
Keyword(s):  
Waveguide Laser ◽  
Glass Waveguide ◽  
Doped Glass

Electron Microprobe and Photoluminescence Analysis of Europium-Doped Gallium Nitride Light Emitters

2002 ◽  
Vol 743 ◽  
Author(s):  
R. W. Martin ◽  
S. Dalmasso ◽  
K. P. O'Donnell ◽  
Y. Nakanishi ◽  
A. Wakahara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Rare Earth ◽  
Visible Region ◽  
Depth Profiling ◽  
Luminescence Spectra ◽  
Light Emitters ◽  
Doping Density ◽  
Annealing Conditions ◽  
Electron Transitions ◽  
Doped Glass

ABSTRACTRare-earth doped GaN structures offer potential for optical devices emitting in the visible region [1,2]. We describe a study of MOVPE grown GaN-on-sapphire epilayers implanted with Europium ions, producing characteristic red emission lines between 540 and 680 nm due to intra-4f(n) electron transitions. As-implanted and subsequently annealed samples are investigated using a combination of wavelength dispersive x-ray analysis (WDX), electron microscopy, cathodoluminescence (CL) and photoluminescence (PL). WDX is shown to be a powerful technique for quantifying rare-earth concentrations in GaN, with varying electron beam voltages allowing a degree of depth profiling, further enhanced by the simultaneous collection of room temperature luminescence (CL) from the analysed region [3]. The intensities of the sharp lines observed in the luminescence spectrum are compared to the doping density (between 1014 – 1015 cm−2) and the Eu content measured by WDX, using a Eu-doped glass standard. Differences observed in the luminescence spectra produced by laser and electron beam excitation will be discussed along with the importance of the annealing conditions, which “heal” defects visible in the electron micrographs.

Single-mode tapered waveguide laser in Er-doped glass with multimode-diode pumping

2003 ◽  
Vol 82 (9) ◽  
pp. 1332-1334 ◽  
Author(s):  
Pratheepan Madasamy ◽  
S. Honkanen ◽  
D. F. Geraghty ◽  
N. Peyghambarian
Keyword(s):  
Single Mode ◽  
Diode Pumping ◽  
Waveguide Laser ◽  
Tapered Waveguide ◽  
Er Doped ◽  
Doped Glass

Continuous wave lasing at 1.54 μm in a flashlamp-pumped ytterbium — erbium-doped glass

2003 ◽  
Vol 33 (12) ◽  
pp. 1062-1064 ◽  
Author(s):  
N E Alekseev ◽  
Lyudmila O Byshevskaya-Konopko ◽  
Igor' L Vorob'ev ◽  
A A Izyneev ◽  
Pavel I Sadovskii
Keyword(s):  
Continuous Wave ◽  
Erbium Doped ◽  
Doped Glass
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