High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure
Keyword(s):
1992 ◽
Vol 4
(1)
◽
pp. 16-18
◽
Keyword(s):
Keyword(s):
1997 ◽
Vol 3
(2)
◽
pp. 336-343
◽
1993 ◽
Vol 5
(1)
◽
pp. 61-63
◽
Keyword(s):