Direct interferometric measurements of quantum-confined Stark effect in InAs/GaAs short period strained-layer superlattice MQWs

1991 ◽  
Vol 27 (25) ◽  
pp. 2303 ◽  
Author(s):  
S.D. Koehler ◽  
E.M. Garmire ◽  
M.H. Jupina ◽  
T.C. Hasenberg ◽  
A.R. Kost
Keyword(s):  
Stark Effect ◽  
Strained Layer ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Strained Layer Superlattice ◽  
Quantum Confined

O-band GeSi quantum-confined Stark effect electro-absorption modulator integrated in a 220nm silicon photonics platform

2020 ◽  
Author(s):  
Clement Porret ◽  
Srinivasan Ashwyn Srinivasan ◽  
Sadhishkumar Balakrishnan ◽  
Peter Verheyen ◽  
Paola Favia ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
Marko Stölzel ◽  
Alexander Müller ◽  
Gabriele Benndorf ◽  
Matthias Brandt ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates

1998 ◽  
Vol 184-185 ◽  
pp. 732-736 ◽  
Author(s):  
Takeshi Nagano ◽  
Ichirou Nomura ◽  
Masaru Haraguchi ◽  
Masayuki Arai ◽  
Hiroshi Hattori ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Inp Substrates

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

Patterns under quantum confined Stark effect

1998 ◽  
Vol 10 (31) ◽  
pp. L539-L546
Author(s):  
L L Bonilla ◽  
V A Kochelap ◽  
C A Velasco
Keyword(s):  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

2009 ◽  
Vol 15 (4) ◽  
pp. 1080-1091 ◽  
Author(s):  
Jae-Hyun Ryou ◽  
P.D. Yoder ◽  
Jianping Liu ◽  
Z. Lochner ◽  
Hyunsoo Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined
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