Waveguided electro-optical intensity modulation in a Si/GexSi1−x/Si heterojunction bipolar transistor

1990 ◽  
Vol 26 (20) ◽  
pp. 1653 ◽  
Author(s):  
R.D. Lareau ◽  
L. Friedman ◽  
R.A. Soref
Keyword(s):  
Bipolar Transistor ◽  
Intensity Modulation ◽  
Heterojunction Bipolar Transistor ◽  
Optical Intensity

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC

1990 ◽  
Vol 26 (2) ◽  
pp. 122 ◽  
Author(s):  
J. Akagi ◽  
Y. Kuriyama ◽  
K. Morizuka ◽  
M. Asaka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Decision Circuit

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

scholarly journals Ballistic two-dimensional lateral heterojunction bipolar transistor

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Leonardo Lucchesi ◽  
Gaetano Calogero ◽  
Gianluca Fiori ◽  
Giuseppe Iannaccone
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Two Dimensional
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