Novel gate voltage ramping technique for the characterisation of metal-oxide-semiconductor capacitor charge trapping properties

1990 ◽  
Vol 26 (16) ◽  
pp. 1257 ◽  
Author(s):  
W. Ting ◽  
G.Q. Lo ◽  
D.L. Kwong
Keyword(s):  
Metal Oxide ◽  
Gate Voltage ◽  
Charge Trapping ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capacitor Charge ◽  
Metal Oxide Semiconductor Capacitor

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor

2019 ◽  
Vol 467-468 ◽  
pp. 1161-1169 ◽  
Author(s):  
Min Baik ◽  
Hang-Kyu Kang ◽  
Yu-Seon Kang ◽  
Kwang-Sik Jeong ◽  
Changmin Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Defect Generation ◽  
Electrical Stress ◽  
Metal Oxide Semiconductor Capacitor

A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

Nature ◽  
2004 ◽  
Vol 427 (6975) ◽  
pp. 615-618 ◽  
Author(s):  
Ansheng Liu ◽  
Richard Jones ◽  
Ling Liao ◽  
Dean Samara-Rubio ◽  
Doron Rubin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optical Modulator ◽  
Metal Oxide Semiconductor Capacitor
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