Low phase noise heterojunction bipolar transistor oscillator

1990 ◽  
Vol 26 (16) ◽  
pp. 1246 ◽  
Author(s):  
M. Ali Khatibzadeh ◽  
B. Bayraktaroglu
Keyword(s):  
Phase Noise ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Low Phase Noise ◽  
Transistor Oscillator

A Ku-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology

2016 ◽  
Vol 25 (06) ◽  
pp. 1650053 ◽  
Author(s):  
Jincan Zhang ◽  
Yuming Zhang ◽  
Hongliang Lu ◽  
Yimen Zhang ◽  
Bo Liu ◽  
...  
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Oscillation Frequency ◽  
Heterojunction Bipolar Transistor ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
Fully Integrated ◽  
Low Phase Noise ◽  
High Output ◽  
Ku Band

In this paper, a fully integrated Ku-band voltage controlled oscillator (VCO) with low phase noise is presented in a GaAs heterojunction bipolar transistor (HBT) technology. A cross-coupled configuration is employed to achieve low phase noise, and to achieve high output power, the largest HBT and higher bias current are adopted. The implemented VCO demonstrates that the oscillation frequency is from 13.77[Formula: see text]GHz to 14.8[Formula: see text]GHz, with a maximum 4.83[Formula: see text]dBm output power at 13.77[Formula: see text]GHz. The phase noise of the VCO is [Formula: see text]100.2[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset from 14.36[Formula: see text]GHz oscillation frequency. The VCO consumes 61.2[Formula: see text]mW from 6[Formula: see text]V supply and occupies an area of 0.51[Formula: see text]mm[Formula: see text][Formula: see text]mm. Finally, the figure-of-merits (FOMs) for VCOs are discussed.

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Power Efficient Implementation of Low Noise CMOS LC VCO using 32nm Technology for RF Applications

2018 ◽  
Vol 6 (8) ◽  
pp. 53
Author(s):  
Shitesh Tiwari ◽  
Sumant Katiyal ◽  
Parag Parandkar
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Tuning Range ◽  
Low Voltage ◽  
Performance Comparison ◽  
Low Noise ◽  
Center Frequency ◽  
Voltage Controlled Oscillator ◽  
Low Phase Noise ◽  
Lc Vco

Voltage Controlled Oscillator (VCO) is an integral component of most of the receivers such as GSM, GPS etc. As name indicates, oscillation is controlled by varying the voltage at the capacitor of LC tank. By varying the voltage, VCO can generate variable frequency of oscillation. Different VCO Parameters are contrasted on the basis of phase noise, tuning range, power consumption and FOM. Out of these phase noise is dependent on quality factor, power consumption, oscillation frequency and current. So, design of LC VCO at low power, low phase noise can be obtained with low bias current at low voltage.  Nanosize transistors are also contributes towards low phase noise. This paper demonstrates the design of low phase noise LC VCO with 4.89 GHz tuning range from 7.33-11.22 GHz with center frequency at 7 GHz. The design uses 32nm technology with tuning voltage of 0-1.2 V. A very effective Phase noise of -114 dBc / Hz is obtained with FOM of -181 dBc/Hz. The proposed work has been compared with five peer LC VCO designs working at higher feature sizes and outcome of this performance comparison dictates that the proposed work working at better 32 nm technology outperformed amongst others in terms of achieving low Tuning voltage and moderate FoM, overshadowed by a little expense of power dissipation. 

Design of wideband discrete VCO with low phase noise

2011 ◽  
Vol 25 (9) ◽  
pp. 817-822
Author(s):  
Zhiqiang Wei ◽  
Zushen Liu ◽  
Wu Huang ◽  
Shu Liu
Keyword(s):  
Phase Noise ◽  
Low Phase Noise
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