High-power 0.98μm GaInAs strained quantum well lasers for Er3+-doped fibre amplifier

M. Okayasu; T. Takeshita; M. Yamada; O. Kogure; M. Horiguchi; M. Fukuda; A. Kozen; K. Oe; S. Uehara

doi:10.1049/el:19891050

High-power 0.98μm GaInAs strained quantum well lasers for Er3+-doped fibre amplifier

Electronics Letters ◽

10.1049/el:19891050 ◽

1989 ◽

Vol 25 (23) ◽

pp. 1563 ◽

Cited By ~ 33

Author(s):

M. Okayasu ◽

T. Takeshita ◽

M. Yamada ◽

O. Kogure ◽

M. Horiguchi ◽

...

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Fibre Amplifier ◽

Strained Quantum Well

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High-power 1.02 μm InGaAs/AlGaAs strained quantum well lasers with GaInP buried waveguides for pumping Pr3+-doped optical fibre amplifier

Electronics Letters ◽

10.1049/el:19930098 ◽

1993 ◽

Vol 29 (2) ◽

pp. 146 ◽

Cited By ~ 4

Author(s):

K. Fukagai ◽

H. Chida ◽

S. Ishikawa ◽

H. Fujii ◽

K. Endo

Keyword(s):

Quantum Well ◽

Optical Fibre ◽

High Power ◽

Quantum Well Lasers ◽

Fibre Amplifier ◽

Strained Quantum Well

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Erratum: High-power 0.98μm GaInAs strained quantum well lasers for Er3+-doped fibre amplifier

Electronics Letters ◽

10.1049/el:19891169 ◽

1989 ◽

Vol 25 (25) ◽

pp. 1747

Author(s):

M. Okayasu ◽

T. Takeshita ◽

M. Yamada ◽

O. Kogure ◽

M. Horiguchi ◽

...

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Fibre Amplifier ◽

Strained Quantum Well

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High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE

Electronics Letters ◽

10.1049/el:19930165 ◽

1993 ◽

Vol 29 (2) ◽

pp. 240 ◽

Cited By ~ 6

Author(s):

Y.K. Sin ◽

H. Horikawa ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Strained Quantum Well

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High power 0.98 μm InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers

Electronics Letters ◽

10.1049/el:19930614 ◽

1993 ◽

Vol 29 (10) ◽

pp. 920-922 ◽

Cited By ~ 9

Author(s):

Y.K. Sin ◽

H. Horikawa

Keyword(s):

Quantum Well ◽

High Power ◽

Distributed Feedback ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Strained Quantum Well

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Catastrophic optical bulk degradation (COBD) in high-power single- and multi-mode InGaAs-AlGaAs strained quantum well lasers

10.1117/12.2250253 ◽

2017 ◽

Cited By ~ 4

Author(s):

Yongkun Sin ◽

Zachary Lingley ◽

Miles Brodie ◽

Nathan Presser ◽

Steven C. Moss

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Strained Quantum Well ◽

Multi Mode

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High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-μm InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE

Proceedings of IEEE 14th International Semiconductor Laser Conference ISLC-94 ◽

10.1109/islc.1994.519317 ◽

2002 ◽

Author(s):

H. Chida ◽

K. Hamamoto ◽

K. Fukagai ◽

T. Miyazaki ◽

S. Ishikawa

Keyword(s):

Quantum Well ◽

High Power ◽

Transverse Mode ◽

Ridge Waveguide ◽

Quantum Well Lasers ◽

Mode Operation ◽

Narrow Ridge ◽

Strained Quantum Well

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High Power InGaAs-GaAs-InGaP Distributed Feedback Buried Heterostructure Strained Quantum Well Lasers at 0.98µm

Optical Amplifiers and Their Applications ◽

10.1364/oaa.1993.tuc4 ◽

1993 ◽

Author(s):

Y. K. Sin ◽

H. Horikawa ◽

C. Q. Xu ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

High Power ◽

Distributed Feedback ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Strained Quantum Well

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High-power, single-mode fiber-coupled 1.3-/spl mu/m strained quantum well lasers

Optical Fiber Communications, OFC. ◽

10.1109/ofc.1996.908252 ◽

1996 ◽

Author(s):

J.M. Verdiell ◽

B. Plano ◽

D.F. Welch

Keyword(s):

Quantum Well ◽

High Power ◽

Single Mode ◽

Single Mode Fiber ◽

Quantum Well Lasers ◽

Strained Quantum Well

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InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum-well lasers for high-power operation at 0.98 mu m

IEEE Photonics Technology Letters ◽

10.1109/68.257160 ◽

1993 ◽

Vol 5 (9) ◽

pp. 966-968

Author(s):

Y.K. Sin ◽

H. Horikawa ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

High Power ◽

Distributed Feedback ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

High Power Operation ◽

Power Operation ◽

Strained Quantum Well

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Carrier transport mechanisms in high-power InGaAs-InGaAsP-InGaP strained quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.848359 ◽

2000 ◽

Vol 36 (7) ◽

pp. 858-863 ◽

Cited By ~ 4

Author(s):

R.G. Ispasoiu ◽

A.M. Fox ◽

D. Botez

Keyword(s):

Quantum Well ◽

High Power ◽

Carrier Transport ◽

Quantum Well Lasers ◽

Transport Mechanisms ◽

Strained Quantum Well

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