scholarly journals Highly efficient 978 nm diode-pumped erbium-doped fibre amplifier with 24 dB gain

1989 ◽  
Vol 25 (20) ◽  
pp. 1386 ◽  
Author(s):  
R.S. Vodhanel ◽  
R.I. Laming ◽  
V. Shah ◽  
L. Curtis ◽  
D.P. Bour ◽  
...  
Keyword(s):  
Highly Efficient ◽  
Fibre Amplifier ◽  
Erbium Doped ◽  
Diode Pumped

Feasibility demonstration of low pump power operation for 1.48 μm diode-pumped erbium-doped fibre amplifier module

1990 ◽  
Vol 26 (15) ◽  
pp. 1102 ◽  
Author(s):  
J.F. Marcerou ◽  
H. Fevrier ◽  
J. Auge ◽  
J. Ramos ◽  
A. Dursin
Keyword(s):  
Pump Power ◽  
Fibre Amplifier ◽  
Erbium Doped ◽  
Diode Pumped ◽  
Power Operation

Repeaterless transmission with 62.9 dB power budget using a highly efficient erbium-doped fibre amplifier module

1990 ◽  
Vol 26 (18) ◽  
pp. 1426 ◽  
Author(s):  
B. Clesca ◽  
J. Auge ◽  
B. Biotteau ◽  
P. Bousselet ◽  
A. Dursin ◽  
...  
Keyword(s):  
Power Budget ◽  
Highly Efficient ◽  
Fibre Amplifier ◽  
Erbium Doped

Thermal properties of an erbium-doped fibre amplifier

1990 ◽  
Vol 137 (3) ◽  
pp. 155 ◽  
Author(s):  
C.A. Millar ◽  
T.J. Whitley ◽  
S.C. Fleming
Keyword(s):  
Thermal Properties ◽  
Fibre Amplifier ◽  
Erbium Doped

Efficient erbium-doped fibre amplifier pumped at 820 nm

1990 ◽  
Vol 26 (23) ◽  
pp. 1936 ◽  
Author(s):  
M. Nakazawa ◽  
Y. Kimura ◽  
E. Yoshida ◽  
K. Suzuki
Keyword(s):  
Fibre Amplifier ◽  
Erbium Doped

Broadly Tunable Femtosecond Sources in the Mid-Infrared and Two-Wavelength Ultrafast Spectroscopy of Holes in GaAs

1998 ◽  
Vol 07 (01) ◽  
pp. 61-71
Author(s):  
C. L. Tang ◽  
K. C. Burr ◽  
F. Sh. Ganikhanov
Keyword(s):  
Conduction Band ◽  
Periodically Poled ◽  
Parametric Oscillators ◽  
Periodically Poled Lithium Niobate ◽  
Highly Efficient ◽  
Optical Parametric ◽  
Hole Band ◽  
Ion Laser ◽  
Diode Pumped ◽  
Band Transition

The recent development of periodically poled lithium niobate (PPLN) has led to a variety of highly efficient and compact all-solid-state nonlinear optical devices. Of particular interest are the optical parametric oscillators. We have most recently demonstrated for the first time a highly efficient broadly tunable femtosecond optical parametric oscillator (fs OPO) using PPLN. The threshold for oscillation of the PPLN fs OPO is remarkably low, on the order of 50 mW. As a result, it is now possible to use a diode-pumped and frequency-doubled Nd:YVO 4 laser, rather than an Ar-ion laser, as the pump source for the mode-locked Ti:sapphire laser for pumping the fs OPO. Such an OPO can operate from approximately 1 μm to 5.4 μm. Femtosecond sources have been used in a variety of experiments to study the dynamics of hot carriers in semiconductors. Because of the limited available wavelength range of earlier femtosecond sources, most such studies have been limited to electron dynamics in the conduction band of III–V compounds such as GaAs. With the extended tuning range of the recently developed fs OPO's, it is now possible to study a much wider variety of materials and transitions. We have recently obtained preliminary results on the ultrafast dynamics of holes in GaAs using two-wavelength tunable femtosecond spectroscopy, by pumping the valence-to-conduction band transition at approximately 800 nm and simultaneously probing the transitions between the split-off band and the perturbed heavy-hole band at approximately 3 μm. These recent results are summarized and discussed briefly.

Highly efficient phase locking and extracavity coherent combination of two diode-pumped Nd:YAG laser beams

1996 ◽  
Vol 21 (24) ◽  
pp. 1996 ◽  
Author(s):  
S. Ménard ◽  
M. Vampouille ◽  
B. Colombeau ◽  
C. Froehly
Keyword(s):  
Nd:Yag Laser ◽  
Phase Locking ◽  
Laser Beams ◽  
Highly Efficient ◽  
Diode Pumped ◽  
Diode Pumped Nd:Yag Laser
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