Digital integrated circuit using GaInAs/Inp heterojunction bipolar transistors

1989 ◽  
Vol 25 (17) ◽  
pp. 1116 ◽  
Author(s):  
P.J. Topham ◽  
J. Thompson ◽  
I. Griffith ◽  
B.A. Hollis ◽  
N.A. Hiams ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Bipolar Transistors ◽  
Digital Integrated Circuit

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

1982 ◽  
Vol 3 (2) ◽  
pp. 43-45 ◽  
Author(s):  
W.V. McLevige ◽  
H.T. Yuan ◽  
W.M. Duncan ◽  
W.R. Frensley ◽  
F.H. Doerbeck ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Bipolar Transistors

SMALL-SCALE InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED AND LOW-POWER INTEGRATED-CIRCUIT APPLICATIONS

2001 ◽  
Vol 11 (01) ◽  
pp. 115-136 ◽  
Author(s):  
TOHRU OKA ◽  
KOJI HIRATA ◽  
HIDEYUKI SUZUKI ◽  
KIYOSHI OUCHI ◽  
HIROYUKI UCHIYAMA ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Bipolar Transistors ◽  
Small Scale ◽  
Flip Flop ◽  
Base Electrode ◽  
Power Integrated Circuit

Small-scale InGaP/GaAs heterojunction bipolar transistors (HBTs) with high-speed as well as low-current operation are demonstrated. To reduce the emitter size SE and the base-collector capacitance CBC simultaneously, the HBTs are fabricated by using WSi/Ti as the base electrode and by burying SiO 2 in the extrinsic collector region. WSi/Ti metals simplify and facilitate processing to fabricate small base electrodes, and the buried SiO 2 reduces the parasitic CBC under the base electrode. The cutoff frequency fT of 156 GHz and the maximum oscillation frequency f max of 255 GHz were obtained at a collector current Ic of 3.5 mA for the HBT with SE of 0.5 μ m ×4.5 μ m , and fT of 114 GHz and f max of 230 GHz were obtained at IC of 0.9 mA for the HBT with SE of 0.25 μ m ×1.5 μ m . A 1/8 static frequency divider operated at a maximum toggle frequency of 39.5 GHz with a power consumption per flip-flop of 190 mW. A transimpedance amplifier provides a gain of 46.5 dB·Ω with a bandwidth of 41.6 GHz at a power consumption of 150 mW. These results indicate the great potential of our HBTs for high-speed. low power integrated circuit applications.

The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

1988 ◽  
Vol 144 ◽  
Author(s):  
Han-Tzong Yuan
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
The Status ◽  
Impurity Doping

ABSTRACTThe status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

Fabrication, Performance, and Reliability of InP-Based HBTs

1993 ◽  
Vol 300 ◽  
Author(s):  
William E. Stanchina ◽  
Robert A. Metzger ◽  
Joseph F. Jensen ◽  
Madjid Hafizi ◽  
David B. Rensch
Keyword(s):  
Indium Phosphide ◽  
Indium Arsenide ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Material Properties ◽  
Bipolar Transistors ◽  
Gallium Indium Arsenide ◽  
The Past ◽  
The Status ◽  
Performance Results

ABSTRACTOver the past 10 years, heterojunction bipolar transistors (HBTs) have progressed to where integrated circuit (IC) products are being sold and foundry services are being commercially offered utilizing gallium arsenide (GaAs) based technology. We will discuss, here, an alternative HBT technology based on indium phosphide (InP). While this technology is less mature than its GaAs counterpart, it offers several attractive benefits in comparison with GaAs. These benefits are provided through several key material properties of InP and ternary compound semiconductors, eg. gallium indium arsenide (GaInAs), grown on the InP. We review the status of this npn HBT technology and present performance results which illustrate the benefits of the technology with respect to electronic applications. Finally, we present measured reliability data for this technology which shows outstanding projected lifetimes.

ULTRAHIGH fmax AlInAs/GaInAs TRANSFERRED-SUBSTRATE HETEROJUNCTION BIPOLAR TRANSISTORS FOR INTEGRATED CIRCUITS APPLICATIONS

1998 ◽  
Vol 09 (02) ◽  
pp. 643-670 ◽  
Author(s):  
BIPUL AGARWAL ◽  
RAJASEKHAR PULLELA ◽  
UDDALAK BHATTACHARYA ◽  
DINO MENSA ◽  
QING-HUNG LEE ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Bipolar Transistors ◽  
Fabrication Process ◽  
Material System ◽  
Rf Performance ◽  
Consequent Increase ◽  
Very High

Transferred-substrate heterojunction bipolar transistors (HBTs) have demonstrated very high bandwidths and are potential candidates for very high speed integrated circuit (IC) applications. The transferred-substrate process permits fabrication of narrow and aligned emitter-base and collector-base junctions, reducing the collector-base capacitance and increasing the device f max . Unlike conventional double-mesa HBTs, transferred-substrate HBTs can be scaled to submicron dimensions with a consequent increase in bandwidth. This paper introduces the concept of transferred-substrate HBTs. Fabrication process in the AlInAs/GaInAs material system is presented, followed by DC and RF performance. A demonstration IC is shown along with some integrated circuits in development.

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