Coherent optical communication with injection-locked high-power semiconductor laser array

1989 ◽  
Vol 25 (17) ◽  
pp. 1112 ◽  
Author(s):  
M. Lucente ◽  
E.S. Kintzer ◽  
S.B. Alexander ◽  
J.G. Fujimoto ◽  
V.W.S. Chan
Keyword(s):  
Semiconductor Laser ◽  
Optical Communication ◽  
High Power ◽  
Laser Array ◽  
Power Semiconductor ◽  
Coherent Optical Communication

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Temperature Characteristic ◽  
Laser Array ◽  
Power Semiconductor

High power semiconductor laser array with single mode emission

2021 ◽  
Author(s):  
Peng Jia ◽  
Zhi-Jun Zhang ◽  
Yong-Yi Chen ◽  
Zai-Jin Li ◽  
Li Qin ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Single Mode ◽  
Laser Array ◽  
Power Semiconductor

The design of a new concavity heat sink for the high power semiconductor laser array

2007 ◽  
Author(s):  
Hong-Dong Zhao ◽  
Mei Sun ◽  
Hong-Li Tian ◽  
Jin-Qin Wang
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Heat Sink ◽  
Laser Array ◽  
Power Semiconductor

High-power semiconductor laser array packaged on microchannel cooler using gold-tin soldering technology

2012 ◽  
Author(s):  
Jingwei Wang ◽  
Lijun Kang ◽  
Pu Zhang ◽  
Zhiqiang Nie ◽  
Xiaoning Li ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Laser Array ◽  
Power Semiconductor ◽  
Soldering Technology

scholarly journals PHOTOREFRACTIVE TECHNIQUES FOR DIODE LASER BEAM COMBINATION

1992 ◽  
Vol 01 (02) ◽  
pp. 431-445 ◽  
Author(s):  
STUART MacCORMACK ◽  
ROBERT W. EASON
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Single Mode ◽  
Signal Beam ◽  
Laser Array ◽  
Power Semiconductor ◽  
Laser Amplifiers ◽  
Single Mode Laser ◽  
Beam Combination ◽  
Diode Laser Beam

Techniques for high-power laser array beam combination processes involving photo-refractive materials are reviewed. Details of an all semiconductor laser scheme for the amplification and subsequent photorefractive beam clean-up of a diffraction limited single-mode laser output is presented. Powers in excess of 100 mW (>220 mW accounting for Fresnel losses) are obtained in a diffraction limited signal beam, corresponding to an array to diffraction limited beam transfer efficiency of 33%. Details of a reflection geometry phase conjugate master oscillator-power amplifier scheme which offers the possibility of power scaling between a number of high-power semiconductor laser amplifiers are presented. Using this technique, a 13-dB amplification of a diffraction limited signal beam is obtained using a commercially available, 10-stripe gain-guided device with no special coatings.

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