Quantum-well high-efficiency millimetre-wave frequency tripler

1989 ◽  
Vol 25 (5) ◽  
pp. 348 ◽  
Author(s):  
A. Rydberg ◽  
H. Grönqvist
Keyword(s):  
Quantum Well ◽  
High Efficiency ◽  
Wave Frequency ◽  
Millimetre Wave

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

scholarly journals High-efficiency optical pumping of nuclear polarization in a GaAs quantum well

2017 ◽  
Vol 96 (20) ◽  
Author(s):  
R. W. Mocek ◽  
V. L. Korenev ◽  
M. Bayer ◽  
M. Kotur ◽  
R. I. Dzhioev ◽  
...  
Keyword(s):  
Quantum Well ◽  
Nuclear Polarization ◽  
Optical Pumping ◽  
High Efficiency

Bilayered Two-Dimensional Hybrid Perovskite with the Cage-Templated Secondary Cation for High Efficiency Photodetection

2022 ◽  
Author(s):  
liwei tang ◽  
Huaixi Chen ◽  
Yu Ma ◽  
Yi Liu ◽  
lina Hua ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Efficiency ◽  
Two Dimensional ◽  
Quantum Well Structures ◽  
Hybrid Perovskite

Two-dimensional (2D) multilayered hybrid perovskites adopting the intrinsic quantum-well structures have shown great application potentials in the field of optoelectronics. Despite extensive studies, the candidate perovskites composed of the cage-templated...

Epitaxial Reflector Structures for High Efficiency Quantum Well Solar Cells

2019 ◽  
Author(s):  
Roger E. Welser ◽  
Stephen J. Polly ◽  
Ashok K. Sood ◽  
Seth M. Hubbard ◽  
Kyle H. Montgomery
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
High Efficiency

scholarly journals AlGaN-Delta-GaN Quantum Well for DUV LEDs

Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 87
Author(s):  
Cheng Liu ◽  
Bryan Melanson ◽  
Jing Zhang
Keyword(s):  
Quantum Well ◽  
High Efficiency ◽  
Light Extraction Efficiency ◽  
Spontaneous Emission Rate ◽  
Light Emitting ◽  
Al Content ◽  
Recombination Efficiency ◽  
Promising Solution ◽  
Deep Ultraviolet ◽  
Difference Time

AlGaN-delta-GaN quantum well (QW) structures have been demonstrated to be good candidates for the realization of high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs). However, such heterostructures are still not fully understood. This study focuses on investigation of the optical properties and efficiency of the AlGaN-delta-GaN QW structures using self-consistent six-band k⸱p modelling and finite difference time domain (FDTD) simulations. Structures with different Al contents in the AlxGa1−xN sub-QW and AlyGa1−yN barrier regions are examined in detail. Results show that the emission wavelength (λ) can be engineered through manipulation of delta-GaN layer thickness, sub-QW Al content (x), and barrier Al content (y), while maintaining a large spontaneous emission rate corresponding to around 90% radiative recombination efficiency (ηRAD). In addition, due to the dominant transverse-electric (TE)-polarized emission from the AlGaN-delta-GaN QW structure, the light extraction efficiency (ηEXT) is greatly enhanced when compared to a conventional AlGaN QW. Combined with the large ηRAD, this leads to the significant enhancement of external quantum efficiency (ηEQE), indicating that AlGaN-delta-GaN structures could be a promising solution for high-efficiency DUV LEDs.

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