Low-noise 0.78μm-band laser diode unit containing Faraday rotator

1988 ◽  
Vol 24 (8) ◽  
pp. 480
Author(s):  
R. Katayama ◽  
Y. Yamanaka ◽  
K. Kubota ◽  
T. Ishikawa
1982 ◽  
Author(s):  
Shoichi Kakimoto ◽  
Yutaka Mlhashi ◽  
Koji Yamashita ◽  
Shigeyuki Nita ◽  
Hisao Kumabe ◽  
...  
Keyword(s):  

2012 ◽  
Vol 29 (5) ◽  
pp. 054205 ◽  
Author(s):  
Qin Liu ◽  
Jian-Li Liu ◽  
Yue-Chun Jiao ◽  
Jin-Xia Feng ◽  
Kuan-Shou Zhang

Author(s):  
KATSUYUKI FUJITO ◽  
T. UNO ◽  
T. ICHIDA ◽  
H. SERIZAWA
Keyword(s):  

1996 ◽  
Vol 07 (03) ◽  
pp. 447-461
Author(s):  
CHUNGUANG LIANG ◽  
QINGMING ZENG ◽  
ZHENCHANG MA ◽  
MINGWEN YUAN ◽  
JINPING AO

This paper presents the R&D of GaAs-based high speed devices and circuits at the Hebei Semiconductor Research Institute (HSRI) in China. It is concerned with low noise and medium power GaAs-MESFET MMIC and monolithic laser diode driver and preamplifier for 2.4 Gb/s fiber communication application, GaAs-based high speed digital circuits like single and dual modulus frequency divider, digital/analog convertor, shift register, HEMT and HBT integrated circuits.


1997 ◽  
Vol 33 (9) ◽  
pp. 809 ◽  
Author(s):  
M. Yamada ◽  
Y. Ohishi ◽  
T. Kanamori ◽  
H. Ono ◽  
S. Sudo ◽  
...  

2009 ◽  
Vol 21 (6) ◽  
pp. 389-391 ◽  
Author(s):  
G. Carpintero ◽  
M.G. Thompson ◽  
R.V. Penty ◽  
I.H. White

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