Switching operation in intersectional type field effect MQW optical switch

1988 ◽  
Vol 24 (7) ◽  
pp. 415 ◽  
Author(s):  
K.G. Ravikumar ◽  
K. Shimomura ◽  
T. Kikugawa ◽  
A. Izumi ◽  
S. Arai ◽  
...  
Keyword(s):  
Field Effect ◽  
Optical Switch ◽  
Switching Operation

2 V drive-voltage switching operation in 1.55 μm GaInAs/InP MQW intersections waveguide optical switch

1992 ◽  
Vol 28 (10) ◽  
pp. 955-957 ◽  
Author(s):  
K. Shimomura ◽  
N. Tanaka ◽  
T. Aizawa ◽  
S. Arai
Keyword(s):  
Optical Switch ◽  
Switching Operation ◽  
Drive Voltage ◽  
Voltage Switching

Switching operation in a GaInAs-InP MQW integrated-twin-guide (ITG) optical switch

1991 ◽  
Vol 3 (3) ◽  
pp. 225-226 ◽  
Author(s):  
M. Kohtoku ◽  
S. Baba ◽  
S. Arai ◽  
Y. Suematsu
Keyword(s):  
Optical Switch ◽  
Switching Operation

scholarly journals Novel Field Effect Photodiode to Control the Output Photocurrent and Fast Optical Switching

2021 ◽  
Author(s):  
Foad Sharafi ◽  
Ali A. Orouji ◽  
Mohammad Soroosh
Keyword(s):  
Field Effect ◽  
Optical Switching ◽  
Optical Switch ◽  
Incident Light ◽  
Mobility Model ◽  
Absorption Region ◽  
Novel Device ◽  
Fermi Statistic ◽  
Effect Transistor ◽  
Optical Applications

Abstract This paper presents a novel device named Field Effect Photodiode (FEPD) to overcome the inherent drawbacks of PIN Photodiode (PIN-PD) and having an accurate control of the output photocurrent either applying the regular PIN-PD as a fast optical switch that provides a desire I ON /I OFF ratio for optical applications in the nanoscale regime. The proposed device combines a Metal Semiconductor Field Effect Transistor (MESFET) and a regular PIN-PD device that can convert the incident light with photon energy greater than the semiconductor’s bandgap to the regulated photocurrent by changing the gates bias which mounted over the absorption region. Our work include additional models such as bandgap narrowing, Shockley–Read–Hall (SRH), Auger (AUGER), the dependence of the carrier mobility on the doping concentration, Lombardi mobility model (CVT), Fermi statistic dependence (FERMIDIRAC), and Lateral electric field-dependent mobility. To extract and illustrate the electrical and optical results of both the regular PIN-PD and the proposed FEPD in this work, we have used TCAD tools as a semiconductor simulator.

Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch

1991 ◽  
Vol 9 (10) ◽  
pp. 1376-1385 ◽  
Author(s):  
K.G. Ravikumar ◽  
T. Aizawa ◽  
K. Matsubara ◽  
M. Asada ◽  
Y. Suematsu
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Optical Switch ◽  
Electric Field Effect ◽  
Low Loss ◽  
Box Structure

Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS

2020 ◽  
Vol 1004 ◽  
pp. 795-800 ◽  
Author(s):  
Masakazu Okada ◽  
Teruaki Kumazawa ◽  
Yusuke Kobayashi ◽  
Masakazu Baba ◽  
Shinsuke Harada
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Short Circuit ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Pin Diode ◽  
Switching Operation ◽  
Turn On ◽  
Switching Losses ◽  
Effect Transistor

A 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench metal oxide semiconductor field effect transistor (MOSFET) (SWITCH-MOS) exhibits potential for solving body-PiN-diode-related problems such as bipolar forward degradation and switching losses among relatively low breakdown voltage 1.2 kV-class SiC MOSFETs. In this study, dynamic characteristics and switching losses of the SWITCH-MOS and conventional MOSFET are compared. The results demonstrate that the SWITCH-MOS exhibits smaller turn-on and reverse recovery losses than a conventional MOSFET at high temperatures. Ruggedness performances such as short circuit and unclamped inductive switching capabilities were evaluated.

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