Simple method for increasing current gain and voltage ratings of power transistors

1987 ◽  
Vol 23 (23) ◽  
pp. 1213
Author(s):  
A. Silard ◽  
F. Floru ◽  
C. Stefan ◽  
G. Nani
Keyword(s):  
Current Gain ◽  
Simple Method ◽  
Power Transistors

Factors limiting current gain in power transistors

1977 ◽  
Vol 24 (10) ◽  
pp. 1255-1259 ◽  
Author(s):  
E.J. McGrath ◽  
D.H. Navon
Keyword(s):  
Limiting Current ◽  
Current Gain ◽  
Power Transistors

scholarly journals Impact of forward emitter current gain and geometry of pnp power transistors on radiation tolerance of voltage regulators

2010 ◽  
Vol 25 (3) ◽  
pp. 179-185 ◽  
Author(s):  
Vladimir Vukic ◽  
Predrag Osmokrovic
Keyword(s):  
Area Ratio ◽  
Voltage Regulators ◽  
Current Gain ◽  
Maximum Output ◽  
Output Current ◽  
Emitter Current ◽  
Power Transistors ◽  
Operational Characteristics ◽  
Rapid Fall ◽  
A Minor

Low-dropout voltage regulators with various geometries and technological realisations of serial pnp power transistors were exposed to ionizing radiation. Although devices with vertical emitters were considered much less susceptible to the influence of radiation on forward emitter current gain than circuits with round emitters, the experiment showed a similar degradation of current gain in both cases. The main reason of high radiation susceptibility of the examined vertical serial pnp transistor is the implementation of an interdigitated emitter, with high perimeter-to-area ratio, causing the great increase of serial transistor?s base current, but a minor influence on the maximum output current. Transistors with round emitters with small perimeter-to-area ratio expressed a moderate current gain degradation, but a rapid fall of the emitter injection efficiency, causing a significant decrease of the maximum output current. Regardless of the similar forward emitter current gain degradation, reliability and operational characteristics of two types of low-dropout voltage regulators were completely different.

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