Simple method for measuring hot-electron temperature in GaAs

1987 ◽  
Vol 23 (1) ◽  
pp. 55-56
Author(s):  
Jiang Xiao-Song ◽  
Yu Li-Sheng ◽  
Wang Shu-Min ◽  
Liu Hong-Xun
Keyword(s):  
Electron Temperature ◽  
Hot Electron ◽  
Simple Method

scholarly journals Hot Electron Temperature Layer in the Martian Atmosphere

2019 ◽  
Author(s):  
Laila Andersson ◽  
Christopher Fowler ◽  
Bob Ergun ◽  
Roger Yelle ◽  
Thomas Edward Cravens ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Martian Atmosphere ◽  
Hot Electron

Effect of spin–orbit coupling on the hot-electron energy relaxation in nanowires

2020 ◽  
Vol 34 (32) ◽  
pp. 2050322
Author(s):  
A. L. Vartanian ◽  
A. L. Asatryan ◽  
A. G. Stepanyan ◽  
K. A. Vardanyan ◽  
A. A. Kirakosyan
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electron Temperature ◽  
Electron Energy ◽  
Power Loss ◽  
Continuum Theory ◽  
Energy Relaxation ◽  
Spin Orbit ◽  
Hot Electron ◽  
Electrical Field Strength

The energy relaxation of hot electrons is proposed based on the spin–orbit (SO) interaction of both Rashba and Dresselhaus types with the effect of hot phonons. A continuum theory of optical phonons in nanowires taking into account the influence of confinement is used to study the hot-electron energy relaxation. The energy relaxation due to both confined (CO) and interface (IO) optical phonon emission on nanowire radius, electrical field strength, parameters of SO couplings and electron temperature is calculated. For considered values of the nanowire radius as well as other system parameters, scattering by IO phonons prevails over scattering by CO phonons. The presence of an electric field leads to the decrease of power loss in transitions between states with the same spin quantum numbers. With the increase of the electric field strength, the influence of the Dresselhaus SO interaction on the energy relaxation rate decreases. The effect of SO interaction does not change the previously obtained increasing dependence of power loss on electron temperature. The sensitivity of energy relaxation to the electric field also through the Rashba parameter allows controlling the rate of energy by electric field.

scholarly journals Electron Temperature and Density Mapping in Planetary Nebulae

1978 ◽  
Vol 76 ◽  
pp. 163-164
Author(s):  
N.K. Reay ◽  
S.P. Worswick
Keyword(s):  
Electron Temperature ◽  
Relative Intensity ◽  
Linear Response ◽  
Narrow Band ◽  
Planetary Nebulae ◽  
Emission Lines ◽  
Simple Method ◽  
Density Mapping ◽  
Intensity Ratios

The linear response of the electronographic process provides a simple method for producing relative intensity ratios of emission lines across a complete nebula. Using narrow-band filters to isolate those lines which are sensitive to electron temperature and density changes, it is possible to map the gross variation of these quantities across the object.

Higher-order electron modes in a two-electron-temperature plasma

1990 ◽  
Vol 43 (2) ◽  
pp. 239-255 ◽  
Author(s):  
R. L. Mace ◽  
M. A. Hellberg
Keyword(s):  
Electron Temperature ◽  
Higher Order ◽  
Hot Electron ◽  
Temperature Plasma ◽  
Critical Curves ◽  
Higher Order Modes ◽  
Electron Acoustic Wave ◽  
Electron Acoustic ◽  
Relationship Of ◽  
The Relationship

We discuss critical curves that allow us to predict, qualitatively, the topological behaviour of higher-order modes in a two-electron-temperature plasma as wavenumber and hot electron fraction are varied. The relationship of these higher-order modes to the electron-acoustic wave is elucidated.

Hot-electron-temperature relaxation time in a two-dimensional electron gas: AlGaN/GaN at 80 K

2002 ◽  
Vol 92 (8) ◽  
pp. 4490-4497 ◽  
Author(s):  
A. Matulionis ◽  
R. Katilius ◽  
J. Liberis ◽  
L. Ardaravičius ◽  
L. F. Eastman ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Electron Temperature ◽  
Electron Gas ◽  
Two Dimensional ◽  
Hot Electron ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Temperature Relaxation ◽  
Dimensional Electron Gas

HOT-PHONON LIMITED ELECTRON ENERGY RELAXATION IN AlN/GaN

2002 ◽  
Vol 12 (02) ◽  
pp. 459-468 ◽  
Author(s):  
A. MATULIONIS ◽  
J. LIBERIS ◽  
L. ARDARAVIČIUS ◽  
J. SMART ◽  
D. PAVLIDIS ◽  
...  
Keyword(s):  
Energy Dissipation ◽  
Electron Temperature ◽  
Electron Energy ◽  
Noise Temperature ◽  
Energy Relaxation ◽  
Channel Measurements ◽  
Hot Electron ◽  
Optical Phonons ◽  
Field Range ◽  
Gas Channel

Microwave noise technique is applied to study energy dissipation in an AlN/GaN heterostructure containing a two-dimensional electron gas channel. Measurements of the dissipated power and the noise temperature are performed at 80 K lattice temperature in the electric field range up to 40 kV/cm. The energy relaxation time is found to decrease from 40 ps to 0.55 ps when the bias is increased. The experimental data are discussed in the electron temperature approximation assuming electron energy dissipation on optical phonons and hot-phonon effects. Dependencies of the hot-phonon number and the hot-phonon temperature on the hot-electron temperature are deduced. The frequency cutoff imposed by the limited energy dissipation through optical phonons is estimated.

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