Monte Carlo particle simulation of the hole-electron plasma formed in a p-n junction

C. Moglestue

doi:10.1049/el:19860270

Monte Carlo particle simulation of the hole-electron plasma formed in a p-n junction

Electronics Letters ◽

10.1049/el:19860270 ◽

1986 ◽

Vol 22 (7) ◽

pp. 397 ◽

Cited By ~ 4

Author(s):

C. Moglestue

Keyword(s):

Monte Carlo ◽

Electron Plasma ◽

Particle Simulation ◽

Monte Carlo Particle Simulation

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Monte Carlo particle simulation of a quantum well heterojunction field‐effect transistor: Comparison with experimental data

Journal of Applied Physics ◽

10.1063/1.363020 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1499-1503 ◽

Cited By ~ 5

Author(s):

C. Moglestue

Keyword(s):

Experimental Data ◽

Monte Carlo ◽

Quantum Well ◽

Field Effect ◽

Field Effect Transistor ◽

Particle Simulation ◽

Effect Transistor ◽

Comparison With Experimental Data ◽

Monte Carlo Particle Simulation

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Monte Carlo Particle Simulation for Electrical and Thermal Analysis of a MESFET using the Finite-Element Approach

2019 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) ◽

10.1109/nemo.2019.8853747 ◽

2019 ◽

Cited By ~ 1

Author(s):

Ze Sun ◽

Nicholas Erickson ◽

Jingdong Sun ◽

Ryan From ◽

Jun Fan

Keyword(s):

Thermal Analysis ◽

Finite Element ◽

Monte Carlo ◽

Particle Simulation ◽

Finite Element Approach ◽

Element Approach ◽

Monte Carlo Particle Simulation

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Ensemble Monte Carlo particle simulation of nonuniformly doped submicrometer gunn diodes

Solid-State Electronics ◽

10.1016/0038-1101(94)90233-x ◽

1994 ◽

Vol 37 (10) ◽

pp. 1789-1790

Author(s):

G. Khrenov ◽

V. Ryzhii ◽

O. Kartashova

Keyword(s):

Monte Carlo ◽

Particle Simulation ◽

Ensemble Monte Carlo ◽

Gunn Diodes ◽

Monte Carlo Particle Simulation

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Monte carlo particle simulation of n-type GaAs field-effect transistors with a p-type buffer layer

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1980.0041 ◽

1980 ◽

Vol 127 (4) ◽

pp. 203

Author(s):

G.S. Sanghera ◽

A. Chryssafis ◽

C. Moglestue

Keyword(s):

Monte Carlo ◽

Buffer Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Particle Simulation ◽

P Type ◽

Monte Carlo Particle Simulation

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Monte Carlo particle simulation of low-density fluid flow on MIMD supercomputers

Proceedings Scalable High Performance Computing Conference SHPCC-92. ◽

10.1109/shpcc.1992.232643 ◽

2003 ◽

Cited By ~ 1

Author(s):

S. Plimpton ◽

T. Bartel

Keyword(s):

Monte Carlo ◽

Fluid Flow ◽

Particle Simulation ◽

Low Density ◽

Monte Carlo Particle Simulation

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Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode

Electronics Letters ◽

10.1049/el:19820089 ◽

1982 ◽

Vol 18 (3) ◽

pp. 133 ◽

Cited By ~ 23

Author(s):

Y. Awano ◽

K. Tomizawa ◽

N. Hashizume ◽

M. Kawashima

Keyword(s):

Monte Carlo ◽

Particle Simulation ◽

Monte Carlo Particle Simulation

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Monte Carlo particle simulation of radiation‐induced heating in GaAs field‐effect transistors

Applied Physics Letters ◽

10.1063/1.105963 ◽

1991 ◽

Vol 59 (2) ◽

pp. 192-194 ◽

Cited By ~ 5

Author(s):

C. Moglestue ◽

F. A. Buot ◽

W. T. Anderson

Keyword(s):

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Particle Simulation ◽

Radiation Induced ◽

Monte Carlo Particle Simulation

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Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT

Simulation of Semiconductor Processes and Devices 1998 ◽

10.1007/978-3-7091-6827-1_43 ◽

1998 ◽

pp. 169-172 ◽

Cited By ~ 1

Author(s):

M. Isler ◽

D. Liebig ◽

K. Schünemann

Keyword(s):

Monte Carlo ◽

Particle Simulation ◽

Spatially Varying ◽

Monte Carlo Particle Simulation ◽

Efficient Modeling

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Monte carlo particle simulation of a GaAs MESFET with a gate trench sloping towards the source

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1985.0048 ◽

1985 ◽

Vol 132 (5) ◽

pp. 217

Author(s):

C. Moglestue

Keyword(s):

Monte Carlo ◽

Particle Simulation ◽

Gaas Mesfet ◽

Monte Carlo Particle Simulation

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Physical modeling of time dependent dielectric breakdown (TDDB) of BEOL oxide using Monte Carlo particle simulation

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931587 ◽

2014 ◽

Cited By ~ 1

Author(s):

Seongwook Choi ◽

Young June Park

Keyword(s):

Monte Carlo ◽

Physical Modeling ◽

Dielectric Breakdown ◽

Particle Simulation ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Monte Carlo Particle Simulation

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