High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAIAs multiple-quantum-well structures

1985 ◽  
Vol 21 (24) ◽  
pp. 1168 ◽  
Author(s):  
Y. Kawamura ◽  
K. Wakita ◽  
H. Asahi
1985 ◽  
Vol 56 ◽  
Author(s):  
H. NEFF ◽  
K. J. BACHMANN ◽  
W. D. LAIDIG

AbstractEmploying temperature dependent photoconductivity, photoluminescence and photoreflectivity measurements, we have analyzed a GaAs-AlAs multiple quantum well. The above optical techniques clearly resolve the fundamental inter-subband transitions, including heavy hole-light hole splittings. At T < 60K an anomalously high photoconductivity was discovered below the direct inter-subband transitions and is attributed tentatively to the presence of extrinsic interface states within the bandgap. For T > l00K the fundamental indirect transition was discovered and associated with LO (L) - phonon absorption.


2000 ◽  
Vol 62 (11) ◽  
pp. 7350-7356 ◽  
Author(s):  
D. Ammerlahn ◽  
J. Kuhl ◽  
B. Grote ◽  
S. W. Koch ◽  
G. Khitrova ◽  
...  

CrystEngComm ◽  
2021 ◽  
Author(s):  
Yu Guo ◽  
Huanqing Chen ◽  
Rui Lang ◽  
Menglai Lei ◽  
Hua Zong ◽  
...  

Maintaining crystal quality during the growth of very thick multiple-quantum-wells is challenging due to the progressive deterioration in thick low-temperature barriers. The insertion of several high-temperature crystallinity restoring (CR) layers...


1986 ◽  
Vol 34 (8) ◽  
pp. 6007-6010 ◽  
Author(s):  
P. Dawson ◽  
K. J. Moore ◽  
G. Duggan ◽  
H. I. Ralph ◽  
C. T. B. Foxon

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

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