Large-signal switching transients in index-guided semiconductor lasers

1984 ◽  
Vol 20 (19) ◽  
pp. 802 ◽  
Author(s):  
R.S. Tucker
Keyword(s):  
Semiconductor Lasers ◽  
Large Signal ◽  
Signal Switching

Microwave-assisted high-speed modulation of semiconductor lasers

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1057-1063 ◽  
Author(s):  
Chung Y. Wu ◽  
Chang Z. Guo ◽  
J. M. Xu
Keyword(s):  
Semiconductor Lasers ◽  
High Speed ◽  
Optical Gain ◽  
Large Signal ◽  
Microwave Assisted ◽  
Active Layers ◽  
Gain Variation ◽  
Speed Modulation ◽  
Signal Simulation ◽  
High Speed Modulation

The electron temperature in the active layers of a semiconductor laser can be raised higher than that of the lattice by an externally applied microwave field. This results in a reduction in the optical gain and forms the basis of laser modulation by microwave heating. The gain variation under electron gas heating is calculated. A complete small signal analysis of current modulation, electron heating modulation, and combined or microwave-assisted modulation of semiconductor lasers is presented. In addition, the sensitivities of the electron and photon responses among the three modulation schemes are compared. Some large signal simulation results of high-speed digital modulation are also included.

IIB-8 Large signal switching response of submicron Si and GaAs MESFET's: Device vs circuit

1981 ◽  
Vol 28 (10) ◽  
pp. 1220-1220 ◽  
Author(s):  
J. Faricelli ◽  
J. Nulman ◽  
P. Krusius ◽  
J. Frey
Keyword(s):  
Large Signal ◽  
Signal Switching
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