Reduction of turn-on delay in laser diode optical switch

1983 ◽  
Vol 19 (2) ◽  
pp. 53 ◽  
Author(s):  
M. Ikeda
Keyword(s):  
Laser Diode ◽  
Optical Switch ◽  
Turn On

Novel assembly method for laser-diode optical switch module

1989 ◽  
Vol 25 (1) ◽  
pp. 62-63 ◽  
Author(s):  
K. Yoshino ◽  
M. Keda
Keyword(s):  
Laser Diode ◽  
Optical Switch ◽  
Assembly Method ◽  
Switch Module

Temperature dependence of turn-on time delay of semiconductor laser diode: Theoretical analysis

2010 ◽  
Vol 18 (4) ◽  
Author(s):  
M.S. Ab Rahman ◽  
M.R. Hassan
Keyword(s):  
Time Delay ◽  
Temperature Dependence ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
Communication Systems ◽  
Recombination Coefficient ◽  
Turn On ◽  
Proposed Model ◽  
Wide Range ◽  
Dc Bias

AbstractTemperature dependence of the turn-on time delay (ton) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (Nth) and consequently the laser diode will be biased below the threshold again and a significant value of ton will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero ton within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of ton is calculated according to the temperature dependence of Nth and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of Nth is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (Iinj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of ton. According to our typical values and at a specified value of modulation current, the dc-bias one (Iib) should be increased from Iib = Ith to Iib ≈ 1.25 and 1.5Ith in order to achieve approximately zero ton when the temperature increases from 25°C to 55°C and 85°C, respectively.

scholarly journals Planar Ultrawideband Antenna with Photonically Controlled Notched Bands

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Drasko Draskovic ◽  
Jean Raphaël Olivier Fernandez ◽  
César Briso Rodríguez
Keyword(s):  
Optical Fiber ◽  
Low Power ◽  
Frequency Response ◽  
Laser Diode ◽  
Near Infrared ◽  
Optical Switch ◽  
Monopole Antenna ◽  
Uwb Antenna ◽  
Design Concepts ◽  
5 Ghz

A design of a planar microstrip-fed ultrawideband (UWB) printed circular monopole antenna with optically controlled notched bands is presented. The proposed antenna is composed of a circular ultrawideband patch, with an etched T-shaped slot controlled by an integrated silicon switch. The slot modifies the frequency response of the antenna suppressing 3.5–5 GHz band when the switch is in open state. The optical switch is controlled by a low-power near-infrared (808 nm) laser diode, which causes the change in the frequency response of the antenna generating a frequency notch. This solution could be expanded to include several notches in the antenna frequency response achieving a fully reconfigurable UWB antenna. The antenna could be remotely controlled at large distances using optical fiber. The prototype antenna has been fully characterized to verify these design concepts.

Laser-diode optical switch module

1984 ◽  
Vol 20 (11) ◽  
pp. 438 ◽  
Author(s):  
H. Kataoka ◽  
M. Ikeda
Keyword(s):  
Laser Diode ◽  
Optical Switch ◽  
Switch Module

Fabrication of 1×4 Optical Switch with Gain Using Dual InGaAsP/InP Laser Diode Amplifier

1999 ◽  
Vol 38 (Part 2, No. 3B) ◽  
pp. L320-L321
Author(s):  
Sang Min Lee ◽  
Kwang Ryong Oh ◽  
Kang Ho Kim ◽  
Jeong Soo Kim ◽  
Seung Goo Kang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Optical Switch

Demonstration of an all-optical switch by use of a multiwavelength mutual injection-locked laser diode

2003 ◽  
Vol 28 (10) ◽  
pp. 837 ◽  
Author(s):  
L. Y. Chan ◽  
P. K. A. Wai ◽  
L. F. K. Lui ◽  
B. Moses ◽  
W. H. Chung ◽  
...  
Keyword(s):  
Laser Diode ◽  
Optical Switch ◽  
All Optical ◽  
All Optical Switch

scholarly journals Short-pulse controlled optical switch using external cavity based single mode Fabry-Pérot laser diode

2014 ◽  
Vol 22 (13) ◽  
pp. 15424 ◽  
Author(s):  
Bikash Nakarmi ◽  
Tran Quoc Hoai ◽  
Yong-Hyub Won ◽  
Xuping Zhang
Keyword(s):  
Laser Diode ◽  
Short Pulse ◽  
Optical Switch ◽  
External Cavity ◽  
Single Mode ◽  
Fabry Perot
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