Changes in photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes induced by forward bias carrier injection

1982 ◽  
Vol 18 (25-26) ◽  
pp. 1075 ◽  
Author(s):  
I. Sakata ◽  
Y. Hayashi
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon ◽  
Forward Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Hydrogenated Amorphous

Influence of film thickness on optical and electrical properties of hydrogenated amorphous silicon

1987 ◽  
Vol 150 (1) ◽  
pp. 1-9 ◽  
Author(s):  
F. Demichelis ◽  
G. Kaniadakis ◽  
E. Mezzetti ◽  
P. Mpawenayo ◽  
A. Tagliaferro ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Optical And Electrical Properties ◽  
Hydrogenated Amorphous

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Metal / Hydrogenated Amorphous Silicon Interfaces

1987 ◽  
Vol 95 ◽  
Author(s):  
Jerzy Kanicki
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Metal Work Function ◽  
Consistent Model ◽  
Current Saturation ◽  
Metal Work ◽  
Hydrogenated Amorphous

The contact properties between different metals and hydrogenated amorphous silicon, prepared by various deposition techniques in different laboratories, are reviewed. From these studies the appropriate metallizations have been established for the achievement of Schottky diode, quasi-ohmic or ohmic contact to undoped and doped films. The various characteristic parameters describing Schottky barrier interfaces such as ideality factor, current saturation, contact resistance and barrier height are discussed. The dependence of Schottky barrier height upon the metal work function, measuring and annealing temperature, and optical band-gap are also reported. The minority-carrier injection and series resistance effects on the contact properties of a-Si:H diodes are described. All the results are interpreted in terms of a self-consistent model that exhibits an electrode-limited to bulk-limited transition.

Electrical properties of Cl incorporated hydrogenated amorphous silicon

1997 ◽  
Vol 49 (1-4) ◽  
pp. 61-67 ◽  
Author(s):  
Kyung Ha Lee ◽  
Sung Ki Kim ◽  
Keun Soo Lee ◽  
Jong Hyun Choi ◽  
Chang Soo Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous
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