Pulse delay measurements in the zero-material-dispersion region for germanium- and phosphorus-doped silica fibres

1978 ◽  
Vol 14 (6) ◽  
pp. 170 ◽  
Author(s):  
Chinlon Lin ◽  
L.G. Cohen ◽  
W.G. French ◽  
V.A. Foertmeyer
Keyword(s):  
Material Dispersion ◽  
Pulse Delay ◽  
Dispersion Region ◽  
Phosphorus Doped

scholarly journals Group index determination by pulse delay measurements and dispersion study in the zero dispersion region of fused silica

2012 ◽  
Vol 29 (10) ◽  
pp. 2797
Author(s):  
Marc Tondusson ◽  
Jérôme Degert ◽  
François Couchot ◽  
Xavier Sarazin ◽  
Marcel Urban ◽  
...  
Keyword(s):  
Fused Silica ◽  
Group Index ◽  
Pulse Delay ◽  
Dispersion Region

A new dissociation mode for dislocations in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 346-347
Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys
Keyword(s):  
Detailed Examination ◽  
Experimental Results ◽  
Dislocation Network ◽  
Weak Beam ◽  
Phosphorus Doped

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped
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