Double-drift millimetre-wave IMPATT diodes prepared by epitaxial growth

1973 ◽  
Vol 9 (8-9) ◽  
pp. 183 ◽  
Author(s):  
B.E. Watts ◽  
A.M. Howard ◽  
G. Gibbons
Keyword(s):  
Epitaxial Growth ◽  
Millimetre Wave ◽  
Impatt Diodes

A comparative study on the noise measure of millimetre-wave GaAs impatt diodes

1994 ◽  
Vol 37 (3) ◽  
pp. 427-431 ◽  
Author(s):  
W. Harth ◽  
W. Bogner ◽  
L. Gaul ◽  
M. Claassen
Keyword(s):  
Comparative Study ◽  
Millimetre Wave ◽  
Noise Measure ◽  
Impatt Diodes

Improved performance of millimetre-wave impatt diodes on type-IIa diamond heatsinks

1976 ◽  
Vol 12 (25) ◽  
pp. 675 ◽  
Author(s):  
D.L. English ◽  
E.M. Nakaji ◽  
R.S. Ying
Keyword(s):  
Millimetre Wave ◽  
Improved Performance ◽  
Impatt Diodes

0.7 W single-drift GaAs IMPATT diodes for millimetre-wave frequencies

1984 ◽  
Vol 20 (9) ◽  
pp. 359 ◽  
Author(s):  
X. Zhang ◽  
J. Freyer
Keyword(s):  
Millimetre Wave ◽  
Impatt Diodes

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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