High-power parallel-array IMPATT diodes

1971 ◽  
Vol 7 (11) ◽  
pp. 301-303 ◽  
Author(s):  
A.M. Cowley ◽  
R.C. Patterson
Keyword(s):  
High Power ◽  
Parallel Array ◽  
Impatt Diodes

High power IMPATT diodes utilizing ion implantation

1967 ◽  
Author(s):  
R.G. Mankarious ◽  
R.S. Ying ◽  
R.W. Bower ◽  
D.L. English
Keyword(s):  
Ion Implantation ◽  
High Power ◽  
Impatt Diodes

High Power, High Reliabilityp-nJunction GaAs IMPATT Diodes for J-Band

1977 ◽  
Vol 16 (S1) ◽  
pp. 93 ◽  
Author(s):  
Kazuo Nishitani ◽  
Osamu Ishihara ◽  
Hiroshi Sawano ◽  
Takashi Ishii ◽  
Shigeru Mitsui ◽  
...  
Keyword(s):  
High Power ◽  
Impatt Diodes

High-power 60 GHz monolithic GaAs impatt diodes

1986 ◽  
Vol 22 (10) ◽  
pp. 562-563 ◽  
Author(s):  
B. Bayraktaroglu ◽  
H.D. Shih
Keyword(s):  
High Power ◽  
60 Ghz ◽  
Impatt Diodes

Thermal and current tuning effects in GaAs high power IMPATT diodes

1979 ◽  
Vol 67 (12) ◽  
pp. 1667-1669 ◽  
Author(s):  
Y. Bellemare ◽  
W.J. Chudobiak
Keyword(s):  
High Power ◽  
Current Tuning ◽  
Impatt Diodes

Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

2011 ◽  
Vol 45 (2) ◽  
pp. 253-259 ◽  
Author(s):  
A. E. Belyaev ◽  
V. V. Basanets ◽  
N. S. Boltovets ◽  
A. V. Zorenko ◽  
L. M. Kapitanchuk ◽  
...  
Keyword(s):  
High Power ◽  
Impatt Diodes

SILICON CARBIDE DIODES FOR MICROWAVE APPLICATIONS

2005 ◽  
Vol 15 (04) ◽  
pp. 899-930 ◽  
Author(s):  
Konstantin Vassilevski
Keyword(s):  
Silicon Carbide ◽  
Thermal Properties ◽  
Schottky Barrier ◽  
High Power ◽  
Current Position ◽  
Microwave Frequencies ◽  
Figures Of Merit ◽  
Microwave Applications ◽  
Device Operation ◽  
Impatt Diodes

Silicon carbide ( SiC ) offers significant advantages for microwave high power devises due to its unique electrical and thermal properties. This review presents a summary of the current position in the development of silicon carbide diodes operating at microwave frequencies: varactors, Schottky barrier mixer diodes, p-i-n and IMPATT diodes. Simplified theory of device operation is given for each kind of microwave diodes to derive the figures of merit, to estimate the potential silicon carbide performance for fabrication of these diodes and to compare SiC with conventional semiconductors. These analyses are followed by description of diode design, fabrication and measured characteristics.

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