Bulk-material device with current-controlled negative resistance

1968 ◽  
Vol 4 (24) ◽  
pp. 532 ◽  
Author(s):  
H.D. Rees
Keyword(s):  
Bulk Material ◽  
Negative Resistance

Lattice imaging and pore structure of β ferric oxyhydroxide

1978 ◽  
Vol 36 (1) ◽  
pp. 264-265
Author(s):  
T. Baird ◽  
J.R. Fryer ◽  
S.T. Galbraith
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Bulk Material ◽  
Model Structure ◽  
Bulk Crystals ◽  
Lattice Imaging ◽  
Thin Sections ◽  
Ferric Oxyhydroxide ◽  
Resolution Electron ◽  
Hydrolysis Of

Introduction Previously we had suggested (l) that the striations observed in the pod shaped crystals of β FeOOH were an artefact of imaging in the electron microscope. Contrary to this adsorption measurements on bulk material had indicated the presence of some porosity and Gallagher (2) had proposed a model structure - based on the hollandite structure - showing the hollandite rods forming the sides of 30Å pores running the length of the crystal. Low resolution electron microscopy by Watson (3) on sectioned crystals embedded in methylmethacrylate had tended to support the existence of such pores.We have applied modern high resolution techniques to the bulk crystals and thin sections of them without confirming these earlier postulatesExperimental β FeOOH was prepared by room temperature hydrolysis of 0.01M solutions of FeCl3.6H2O, The precipitate was washed, dried in air, and embedded in Scandiplast resin. The sections were out on an LKB III Ultramicrotome to a thickness of about 500Å.

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Investigation of cluster layers of small netal particles by TEM, SEM, EELS and by photoacoustic spectroscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 250-251
Author(s):  
H. Seiler ◽  
U. Haas ◽  
K.H. Körtje
Keyword(s):  
Bulk Material ◽  
High Vacuum ◽  
Optical Methods ◽  
Metal Particles ◽  
Silver Particles ◽  
Low Loss ◽  
Plasmon Excitation ◽  
First Results ◽  
Diffraction Patterns ◽  
Small Metal Particles

The physical properties of small metal particles reveal an intermediate position between atomic and bulk material. Especially Ag has shown pronounced size effects. We compared silver layers evaporated in high vacuum with cluster layers of small silver particles, evaporated in N2 at a pressure of about 102 Pa. The investigations were performed by electron optical methods (TEM, SEM, EELS) and by Photoacoustic (PA) Spectroscopy (gas-microphone detection).The observation of cluster layers with TEM and high resolution SEM show small silver particles with diameters of about 50 nm (Fig. 1 and Figure 2, respectively). The electron diffraction patterns of homogeneous Ag layers and of cluster layers are similar, whereas the low loss EELS spectra due to plasmon excitation are quite different. Fig. 3 and Figure 4 show first results of EELS spectra of a cluster layer of small silver particles on carbon foil and of a homogeneous Ag layer, respectively.

CBED analysis of impurity distributions in AlN

1990 ◽  
Vol 48 (4) ◽  
pp. 214-215
Author(s):  
Daniel Callahan ◽  
G. Thomas
Keyword(s):  
Aluminum Nitride ◽  
Bulk Material ◽  
Strong Dependence ◽  
Lattice Parameter ◽  
Promising Technique ◽  
Nitride Ceramics ◽  
Surface Phases ◽  
Convergent Beam ◽  
Oxygen Impurities

Oxygen impurities may significantly influence the properties of nitride ceramics with a strong dependence on the microstructural distribution of the impurity. For example, amorphous oxygen-rich grain boundary phases are well-known to cause high-temperature mechanical strength degradation in silicon nitride whereas solutionized oxygen is known to decrease the thermal conductivity of aluminum nitride. Microanalytical characterization of these impurities by spectral methods in the AEM is complicated by reactions which form oxygen-rich surface phases not representative of the bulk material. Furthermore, the impurity concentrations found in higher quality ceramics may be too low to measure by EDS or PEELS. Consequently an alternate method for the characterization of impurities in these ceramics has been investigated.Convergent beam electron diffraction (CBED) is a promising technique for the study of impurity distributions in aluminum nitride ceramics. Oxygen is known to enter into stoichiometric solutions with AIN with a consequent decrease in lattice parameter.

Images and Applications of Ion Explosion Spike Pits

1990 ◽  
Vol 48 (1) ◽  
pp. 584-585
Author(s):  
P. Fraundorf ◽  
J. Tentschert
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Bulk Material ◽  
Coulomb Repulsion ◽  
The Body ◽  
Atomic Scale ◽  
Early Solar System ◽  
Transmission Electron ◽  
Nuclear Particle ◽  
Particle Tracks

Since the discovery of their etchability in the early 1960‘s, nuclear particle tracks in insulators have had a diverse and exciting history of application to problems ranging from the selective filtration of cancer cells from blood to the detection of 244Pu in the early solar system. Their usefulness stems from the fact that they are comprised of a very thin (e.g. 20-40Å) damage core which etches more rapidly than does the bulk material. In fact, because in many insulators tracks are subject to radiolysis damage (beam annealing) in the transmission electron microscope, the body of knowledge concerning etched tracks far outweighs that associated with latent (unetched) tracks in the transmission electron microscope.With the development of scanned probe microscopies with lateral resolutions on the near atomic scale, a closer look at the structure of unetched nuclear particle tracks, particularly at their point of interface with solid surfaces, is now warranted and we think possible. The ion explosion spike model of track formation, described loosely, suggests that a burst of ionization along the path of a charged particle in an insulator creates an electrostatically unstable array of adjacent ions which eject one another by Coulomb repulsion from substitutional into interstitial sites. Regardless of the mechanism, the ejection process which acts to displace atoms along the track core seems likely to operate at track entry and exit surfaces, with the added feature of mass loss at those surfaces as well. In other words, we predict pits whose size is comparable to the track core width.

An hourglass-type electromagnetic isolator with negative resistance electromagnetic shunt circuit

2020 ◽  
Vol 64 (1-4) ◽  
pp. 549-556
Author(s):  
Yajun Luo ◽  
Linwei Ji ◽  
Yahong Zhang ◽  
Minglong Xu ◽  
Xinong Zhang
Keyword(s):  
Vibration Isolation ◽  
Electromechanical Coupling ◽  
Coupling Effect ◽  
Negative Resistance ◽  
Isolation System ◽  
Amplitude Vibration ◽  
Vibration Responses ◽  
The Stability ◽  
Isolation Performance ◽  
Shunt Circuit

The present work proposed an hourglass-type electromagnetic isolator with negative resistance (NR) shunt circuit to achieve the effective suppression of the micro-amplitude vibration response in various advanced instruments and equipment. By innovatively design of combining the displacement amplifier and the NR electromagnetic shunt circuit, the current new type of vibration isolator not only can effectively solve the problem of micro-amplitude vibration control, but also has significant electromechanical coupling effect, to obtain excellent vibration isolation performance. The design of the isolator and motion relationship is presented firstly. The electromechanical coupling dynamic model of the isolator is also given. Moreover, the optimal design of the NR electromagnetic shunt circuit and the stability analysis of the vibration isolation system are carried out. Finally, the simulation results about the transfer function and vibration responses demonstrated that the isolator has a significant isolation performance.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

Degradation Analysis of Thick Film Chip Resistors

2009 ◽  
Author(s):  
Bhanu Sood ◽  
Diganta Das ◽  
Michael H. Azarian ◽  
Michael Pecht
Keyword(s):  
Thick Film ◽  
Printed Circuit Board ◽  
Negative Resistance ◽  
Circuit Board ◽  
High Humidity ◽  
Circuit Boards ◽  
Chemical Modifications ◽  
Current Leakage ◽  
Printed Circuit ◽  
Degradation Analysis

Abstract Negative resistance drift in thick film chip resistors in high temperature and high humidity application conditions was investigated. This paper reports on the investigation of possible causes including formation of current leakage paths on the printed circuit board, delamination between the resistor protective coating and laser trim, and the possibility of silver migration or copper dendrite formation. Analysis was performed on a set of circuit boards exhibiting failures due to this phenomenon. Electrical tests after mechanical and chemical modifications showed that the drift was most likely caused by moisture ingress that created a conductive path across the laser trim.

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