Effects of instability on low-frequency characteristics of CdSe thin-film transistors

1967 ◽  
Vol 3 (9) ◽  
pp. 408 ◽  
Author(s):  
O.O. Turriff ◽  
S.S. Koli
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Characteristics ◽  
Cdse Thin Film

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

1/f Noise Behavior in Pentacene Organic Thin Film Transistors

1999 ◽  
Vol 598 ◽  
Author(s):  
P. V. Necliudov ◽  
D. J. Gundlach ◽  
T. N. Jackson ◽  
S. L. Rumyantsev ◽  
M. S. Shur
Keyword(s):  
Thin Film ◽  
Conducting Polymers ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Organic Thin Film ◽  
Amorphous Si ◽  
Parameter Values ◽  
Device Noise

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

scholarly journals Numerical simulations of conduction and low-frequency noise in polysilicon thin film transistors

2007 ◽  
Vol 515 (19) ◽  
pp. 7556-7559 ◽  
Author(s):  
A. Boukhenoufa ◽  
C. Cordier ◽  
L. Pichon ◽  
B. Cretu
Keyword(s):  
Thin Film ◽  
Numerical Simulations ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Analysis of low frequency noise characteristics in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740020
Author(s):  
Yuan Liu ◽  
Yun-Fei En ◽  
Wen-Xiao Fang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Gate Oxide ◽  
Localized States ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
P Type

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f[Formula: see text] (with [Formula: see text] near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge’s parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be [Formula: see text]. By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while [Formula: see text] is about [Formula: see text], [Formula: see text] is [Formula: see text][Formula: see text]617 K, [Formula: see text] is [Formula: see text] and [Formula: see text] is [Formula: see text][Formula: see text]265 K.

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