Design of high‐efficiency CMOS rectifier with low reverse leakage for RF energy harvesting

2019 ◽  
Vol 55 (8) ◽  
pp. 446-448 ◽  
Author(s):  
Hyeonwoo Kim ◽  
Ickjin Kwon
Keyword(s):  
Energy Harvesting ◽  
High Efficiency ◽  
Rf Energy Harvesting ◽  
Rf Energy

A Broadband High-Efficiency RF Rectifier for Ambient RF Energy Harvesting

2020 ◽  
Vol 30 (12) ◽  
pp. 1185-1188
Author(s):  
Wenbo Liu ◽  
Kama Huang ◽  
Tao Wang ◽  
Zhuoyue Zhang ◽  
Jing Hou
Keyword(s):  
Energy Harvesting ◽  
High Efficiency ◽  
Rf Energy Harvesting ◽  
Rf Energy

High efficiency rectification by SOI based gate controlled diode for RF energy harvesting

2013 ◽  
Author(s):  
Ryo Umesao ◽  
Jiro Ida ◽  
Kouta Kawabata ◽  
Sou Tashino ◽  
Keisuke Noguchi ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
High Efficiency ◽  
Rf Energy Harvesting ◽  
Rf Energy

scholarly journals Simple Adaptive Rectifier with High Efficiency over a Range of 21 dBm Input Power for RF Energy Harvesting Applications

2021 ◽  
pp. 8-15
Author(s):  
Eman M. Abdelhady ◽  
◽  
Hala M. Abdelkader ◽  
Amr A. Al-Awamry
Keyword(s):  
Energy Harvesting ◽  
Low Power ◽  
Breakdown Voltage ◽  
Adaptive Design ◽  
High Efficiency ◽  
Power Level ◽  
Input Power ◽  
Rf Energy Harvesting ◽  
High Input Power ◽  
Rf Energy

This paper presents a novel simple adaptive and efficient rectifier for Radio Frequency (RF) energy harvesting applications. Traditional rectifiers have maximum RF-DC Power Conversion Efficiency (PCE) over a narrow range of RF input power due to diode breakdown voltage restrictions. The proposed adaptive design helps to extend the PCE over a wider range of RF input power at 2.45GHz using a simple design. Two alternative paths arecontrolled depending on the RF input power level. Low input power levels activate the first path connected to a single rectifier; low power levels make the diode operate below its breakdown voltage and therefore avoiding PCE degradation. High input power levels activate the second path dividing it into three rectifiers. This keeps input power at each rectifier at a low power level to avoid exceeding the diode break down voltage. Simulated PCE of this work is kept above 50% over a range of 21.4 dBm input power from -0.8dBm to 20.6dBm.

scholarly journals High-Efficiency Triple-Band RF-to-DC Rectifier Primary Design for RF Energy-Harvesting Systems

Telecom ◽  
2021 ◽  
Vol 2 (3) ◽  
pp. 271-284
Author(s):  
Maria S. Papadopoulou ◽  
Achilles D. Boursianis ◽  
Christos K. Volos ◽  
Ioannis N. Stouboulos ◽  
Spyridon Nikolaidis ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Low Power ◽  
High Efficiency ◽  
Feasible Solution ◽  
Dual Band ◽  
Rf Energy Harvesting ◽  
Frequency Bands ◽  
Initial Design ◽  
Rf Energy ◽  
Triple Band

Radio Frequency (RF) energy harvesting has been emerged as a potentially reliable method to replace the costly and difficult to maintain source of low-power wireless sensor networks. A plethora of dual-band rectifier designs has been proposed in the literature operating in various frequency bands. In this paper, a triple-band RF-to-DC rectifier that operates in the frequency bands of LoRaWAN, GSM-900, and WiFi 2.4 GHz is presented. The system is composed of an impedance-matching circuit, an RF-to-DC rectifier, that converts the ambient RF energy into DC voltage able to feed low-power devices, and an output load. The proposed system resonates at three different frequencies of 866 MHz, 948 MHz and 2423 MHz, which fall within the aforementioned frequency bands of interest. The feasible solution of the proposed system was based on a dual-band rectifier operating in the frequency bands of LoRaWAN and GSM-900. A series of shunt stubs was utilized in the initial design to form the feasible solution of the proposed system. The proposed triple-band rectifier was optimized using a powerful optimization algorithm, i.e., the genetic algorithm. The overall system exhibited improved characteristics compared to the initial design in terms of its resonance. Numerical results demonstrated that the overall system exhibited an efficiency of 81% with 3.23 V of the output voltage, for an input power of 0 dBm and a load of 13 kOhm.

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