Miniaturised X‐band balanced microwave limiter based on thin film hybrid integrated circuit technology

2016 ◽  
Vol 52 (15) ◽  
pp. 1318-1319 ◽  
Author(s):  
Jing Ai ◽  
Yong Hong Zhang ◽  
Kai Da Xu ◽  
Yang Yang ◽  
Yin Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuit ◽  
Hybrid Integrated Circuit ◽  
X Band ◽  
Circuit Technology

Mechanical Properties of Microsensor Materials: How to Deal with the Process Dependences?

1991 ◽  
Vol 239 ◽  
Author(s):  
Stephen D. Senturia
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Integrated Circuit ◽  
Object Oriented ◽  
Cad System ◽  
Measurement Devices ◽  
Materials Used ◽  
Oriented Material ◽  
Circuit Technology

ABSTRACTMicrosensors are measurement devices fabricated using planar integrated circuit technology together with enhancements generically called “micromachining”. It is well known that the thin-film materials used in microelectronics can have properties which differ from their bulk counterparts. In addition, thin-film materials exhibit residual stress, which is known to be strongly process dependent. The sensor designer must understand how the detailed process used to fabricate a particular device impacts the specific mechanical properties, hence, the expected mechanical device performance. This paper illustrates the problem of process-dependent material properties using examples of residual stress of several materials, and then presents an object-oriented material-property database which is being developed as part of a CAD system for microelectromechan-ical systems (MEMCAD).

Status of thin film integrated circuit technology

1972 ◽  
Vol 12 (2) ◽  
pp. 295-303 ◽  
Author(s):  
H. Basseches ◽  
D. Gerstenberg
Keyword(s):  
Thin Film ◽  
Integrated Circuit ◽  
Circuit Technology

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

PERFORMANCE AT THE EDGE: GALLIUM ARSENIDE AND SILICON ICs FOR OPTICAL ELECTRONICS

1991 ◽  
Vol 02 (03) ◽  
pp. 147-162 ◽  
Author(s):  
ROBERT G. SWARTZ
Keyword(s):  
Gallium Arsenide ◽  
Optical Communication ◽  
Optical Communications ◽  
Integrated Circuit ◽  
High Performance ◽  
Compound Semiconductor ◽  
Performance Curve ◽  
Semiconductor Technology ◽  
Market Trends ◽  
Circuit Technology

Compound semiconductor technology is rapidly entering the mainstream, and is quickly finding its way into consumer applications where high performance is paramount. But silicon integrated circuit technology is evolving up the performance curve, and CMOS in particular is consuming ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of megahertz to multi-gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This paper reviews the high performance electronics found in optical communication applications from a technology standpoint, illustrating merits and market trends for these competing, yet often complementary IC technologies.

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