0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100

2014 ◽  
Vol 50 (22) ◽  
pp. 1631-1633 ◽  
Author(s):  
N. Kashio ◽  
K. Kurishima ◽  
M. Ida ◽  
H. Matsuzaki
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Double Heterojunction ◽  
A Current

2D Cu 9 S 5 /PtS 2 /WSe 2 Double Heterojunction Bipolar Transistor with High Current Gain

2021 ◽  
pp. 2106537
Author(s):  
Sanjun Yang ◽  
Lejing Pi ◽  
Liang Li ◽  
Kailang Liu ◽  
Ke Pei ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Double Heterojunction

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

GaInP Selective Area Epitaxy for Heterojunction Bipolar Transistor Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
S. H. PARK ◽  
S.-L. FU ◽  
P. K. L. YU ◽  
P. M. ASBECK
Keyword(s):  
Light Field ◽  
Defect Density ◽  
Forward Bias ◽  
Dark Field ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Selective Area Epitaxy ◽  
Metal Base ◽  
Selective Area

AbstractA study of selective area epitaxy (SAE) of GalnP lattice matched to GaAs is presented. The selectively regrown GaInP is used as the emitter of a novel heterojunction bipolar transistor (HBT) device structure. Successful SAE of GalnP on both dark field (mostly covered) and light field (mostly open) SiO2 masks is compared. To characterize the critical regrown heterojunction, diodes and HBTs were fabricated and measured. It is found that a pre-growth pause of either TEGa or PH3 results in forward bias characteristics with low leakage and an ideality factor of ~1.25, indicating low interfacial defect density. Non-self aligned regrown emitter HBTs grown with a dark field mask scheme have been fabricated. Devices with an emitter area of 3x12 μm exhibit small signal current gain up to 80 with an fT and fMAX of 22 GHz and 18 GHz, respectively. To further improve the performance of these devices, a structure with a self-aligned refractory metal base contact and light field regrowth is proposed.

A THz InGaAs/InP double heterojunction bipolar transistor withfmax= 325 GHz and BVCBO= 10.6 V

2013 ◽  
Vol 34 (5) ◽  
pp. 054006 ◽  
Author(s):  
Wei Cheng ◽  
Yuan Wang ◽  
Yan Zhao ◽  
Haiyan Lu ◽  
Hanchao Gao ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures

2000 ◽  
Vol 88 (3) ◽  
pp. 1600-1605 ◽  
Author(s):  
Hiroki Sugiyama ◽  
Noriyuki Watanabe ◽  
Kazuo Watanabe ◽  
Takashi Kobayashi ◽  
Kazumi Wada
Keyword(s):  
Signal Intensity ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain
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