scholarly journals 4+1-transistor pixel architecture for high-speed, high-resolution CMOS image sensors

2011 ◽  
Vol 47 (22) ◽  
pp. 1221 ◽  
Author(s):  
A. Xhakoni ◽  
D. San Segundo Bello ◽  
P. De Wit ◽  
G. Gielen
2015 ◽  
Vol 15 (8) ◽  
pp. 4365-4372
Author(s):  
Swetha S. George ◽  
Mark F. Bocko ◽  
Zeljko Ignjatovic

2013 ◽  
Vol 22 (01) ◽  
pp. 1250076 ◽  
Author(s):  
KAIMING NIE ◽  
SUYING YAO ◽  
JIANGTAO XU ◽  
JING GAO

A current source circuit for high-resolution CMOS image sensors is introduced in this paper, which can provide a stable current with immunity from IR-drop along the power and ground wires. In the circuit, two pre-charged floating capacitors controlled by two-phase non-overlap clock are connected between the gate and source of a MOS transistor alternately to maintain a constant V GS of the MOS transistor. In this way, the current flowing through the MOS transistor will be stable and has nothing to do with power level. The post simulation results show that the current supplied by the proposed circuit decreases only by 1.6% when the voltage of the power supply decreases by 30%. The simulations have proved that the proposed circuit can improve the performance of high-resolution CMOS image sensors.


2015 ◽  
Vol 24 (04) ◽  
pp. 1550054 ◽  
Author(s):  
Jiangtao Xu ◽  
Jing Yu ◽  
Fujun Huang ◽  
Kaiming Nie

This paper presents a 10-bit column-parallel single slope analog-to-digital converter (SS ADC) with a two-step time-to-digital converter (TDC) to overcome the long conversion time problem in conventional SS ADC for high-speed CMOS image sensors (CIS). The time interval proportional to the input signal is generated by a ramp generator and a comparator, which is digitized by a two-step TDC consisting of coarse and fine conversions to achieve a high-precision time-interval measurement. To mitigate the impact of propagation delay mismatch, a calibration circuit is also proposed to calibrate the delay skew within -T/2 to T/2. The proposed ADC is designed in 0.18 μm CMOS process. The power dissipation of each column circuit is 232 μW at supply voltages of 3.3 V for the analog circuits and 1.8 V for the digital blocks. The post simulation results indicate that the ADC achieves a SNDR of 60.89 dB (9.82 ENOB) and a SFDR of 79.98 dB at a conversion rate of 2 MS/s after calibration, while the SNDR and SFDR are limited to 41.52 dB and 67.64 dB, respectively before calibration. The differential nonlinearity (DNL) and integral nonlinearity (INL) without calibration are +15.80/-15.29 LSB and +1.68/-15.34 LSB while they are reduced down to +0.75/-0.25 LSB and +0.76/-0.78 LSB with the proposed calibration.


2014 ◽  
Vol 35 (10) ◽  
pp. 105008
Author(s):  
Quanliang Li ◽  
Liyuan Liu ◽  
Ye Han ◽  
Zhongxiang Cao ◽  
Nanjian Wu

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