Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP

2011 ◽  
Vol 47 (20) ◽  
pp. 1144 ◽  
Author(s):  
J. Yuan ◽  
B. Chen ◽  
A.L. Holmes
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Near Infrared ◽  
Lattice Matched

scholarly journals Enhancing sub-bandgap external quantum efficiency by photomultiplication for narrowband organic near-infrared photodetectors

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jonas Kublitski ◽  
Axel Fischer ◽  
Shen Xing ◽  
Lukasz Baisinger ◽  
Eva Bittrich ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Optical Cavity ◽  
Hole Injection ◽  
Visible Range ◽  
Absorption Region ◽  
Electromagnetic Signals ◽  
Organic Photodetectors

AbstractDetection of electromagnetic signals for applications such as health, product quality monitoring or astronomy requires highly responsive and wavelength selective devices. Photomultiplication-type organic photodetectors have been shown to achieve high quantum efficiencies mainly in the visible range. Much less research has been focused on realizing near-infrared narrowband devices. Here, we demonstrate fully vacuum-processed narrow- and broadband photomultiplication-type organic photodetectors. Devices are based on enhanced hole injection leading to a maximum external quantum efficiency of almost 2000% at −10 V for the broadband device. The photomultiplicative effect is also observed in the charge-transfer state absorption region. By making use of an optical cavity device architecture, we enhance the charge-transfer response and demonstrate a wavelength tunable narrowband photomultiplication-type organic photodetector with external quantum efficiencies superior to those of pin-devices. The presented concept can further improve the performance of photodetectors based on the absorption of charge-transfer states, which were so far limited by the low external quantum efficiency provided by these devices.

Quantum efficiency of silicon photodiodes in the near-infrared spectral range

2003 ◽  
Vol 42 (22) ◽  
pp. 4415 ◽  
Author(s):  
Chris Hicks ◽  
Mark Kalatsky ◽  
Richard A. Metzler ◽  
Alexander O. Goushcha
Keyword(s):  
Quantum Efficiency ◽  
Spectral Range ◽  
Near Infrared ◽  
Infrared Spectral Range ◽  
Infrared Spectral

Near-infrared photon upconversion devices based on GaNAsSb active layer lattice matched to GaAs

2009 ◽  
Vol 94 (9) ◽  
pp. 093504 ◽  
Author(s):  
Y. Yang ◽  
W. Z. Shen ◽  
H. C. Liu ◽  
S. R. Laframboise ◽  
S. Wicaksono ◽  
...  
Keyword(s):  
Active Layer ◽  
Near Infrared ◽  
Infrared Photon ◽  
Lattice Matched

scholarly journals Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 428
Author(s):  
Reza Masoudian Saadabad ◽  
Christian Pauly ◽  
Norbert Herschbach ◽  
Dragomir N. Neshev ◽  
Haroldo T. Hattori ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Speed ◽  
Near Infrared ◽  
Infrared Detector ◽  
High Quantum Efficiency ◽  
Fast Detection ◽  
High Quantum ◽  
Resonant Modes ◽  
Infrared Wavelengths ◽  
Dielectric Metasurface

Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.

Air-processed stable near-infrared Si-based perovskite light-emitting devices with efficiency exceeding 7.5%

2022 ◽  
Author(s):  
Xiaoxiao Xu ◽  
Ke Xiao ◽  
Guozhi Hou ◽  
Yu Zhu ◽  
Ting Zhu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Ambient Air ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Composite Layers

Two composite layers are used to enhance the efficiency of Si-based near-infrared perovskite light-emitting devices, which are produced in ambient air, and the external quantum efficiency increased to 7.5%.

Pixels with add-on structures to enhance quantum efficiency in the near infrared

2021 ◽  
Author(s):  
Felix Bardonnet ◽  
Axel Crocherie ◽  
Marios Barlas ◽  
Quentin Abadie ◽  
Clemence Jamin-Mornet
Keyword(s):  
Quantum Efficiency ◽  
Near Infrared
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