Suppression of Q-switching instabilities of passively modelocked semiconductor lasers by a passive electrical circuit

2011 ◽  
Vol 47 (17) ◽  
pp. 988 ◽  
Author(s):  
L. Drzewietzki ◽  
S. Breuer ◽  
W. Elsäßer
Keyword(s):  
Semiconductor Lasers ◽  
Electrical Circuit ◽  
Q Switching

Erratum: New theory of internal Q switching in semiconductor lasers

1974 ◽  
Vol 10 (20) ◽  
pp. 424
Author(s):  
S. Gründorfer ◽  
M.J. Adams ◽  
B. Thomas
Keyword(s):  
Semiconductor Lasers ◽  
Q Switching

A comprehensive model for Q switching in semiconductor lasers

1975 ◽  
Vol 11 (7) ◽  
pp. 528-532 ◽  
Author(s):  
B. Thomas ◽  
M. Adams ◽  
S. Grundorfer
Keyword(s):  
Semiconductor Lasers ◽  
Comprehensive Model ◽  
Q Switching

Experimental investigations on the suppression of Q switching in monolithic 40GHz mode-locked semiconductor lasers

2006 ◽  
Vol 88 (22) ◽  
pp. 221104 ◽  
Author(s):  
B. Hüttl ◽  
R. Kaiser ◽  
Ch. Kindel ◽  
S. Fidorra ◽  
W. Rehbein ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Experimental Investigations ◽  
Q Switching

Internal Q-switching in semiconductor lasers: high intensity pulses of the picosecond range and the spectral peculiarities

1995 ◽  
Vol 31 (6) ◽  
pp. 1015-1021 ◽  
Author(s):  
S. Vainshtein ◽  
V.V. Rossin ◽  
A. Kilpela ◽  
J. Kostamovaara ◽  
R. Myllyla ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Intensity ◽  
Q Switching

scholarly journals Modulation Performance Enhancement of Directly Modulated Injection-Locked Semiconductor Lasers Using an Equivalent Electrical Circuit

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2409
Author(s):  
Ho-Jun Bae ◽  
Jun-Hyung Cho ◽  
Hyuk-Kee Sung
Keyword(s):  
Frequency Response ◽  
Semiconductor Lasers ◽  
Integrated Circuit ◽  
Performance Enhancement ◽  
Damping Ratio ◽  
Relaxation Oscillation ◽  
Electrical Circuit ◽  
Equivalent Electrical Circuit ◽  
Direct Modulation ◽  
Locking Range

We propose an equivalent electrical circuit model to evaluate the direct modulation performance of optically injection-locked (OIL) semiconductor lasers. We modeled the equivalent circuit of the OIL laser based on alternating complex envelope representations, simulated it using the Simulation Program with Integrated Circuit Emphasis (SPICE), and analyzed the frequency response of the OIL laser. Although the frequency response of the OIL laser is better than that of a free-running laser, its 3-dB modulation performance is degraded by the relaxation oscillation that occurs during direct modulation of the semiconductor laser. To overcome this limitation and maintain the maximum modulation performance within the entire locking range, we also designed an electrical filter to preprocess the electrical modulation signal and compensate for the non-flat modulation output of the OIL laser. The damping ratio of the directly modulated OIL laser increased by 0.101 (280%) and its settling time decreased by >0.037 (44%) when the electrical compensation circuit was added, exhibiting a flat 3-dB modulation bandwidth of 28.79 GHz.

New theory of internal Q switching in semiconductor lasers

1974 ◽  
Vol 10 (17) ◽  
pp. 354 ◽  
Author(s):  
S. Gründorfer ◽  
M.J. Adams ◽  
B. Thomas
Keyword(s):  
Semiconductor Lasers ◽  
Q Switching

Q-switching of semiconductor lasers

1977 ◽  
Vol 13 (2) ◽  
pp. 37-43 ◽  
Author(s):  
T. Tsukada ◽  
Chung Tang
Keyword(s):  
Semiconductor Lasers ◽  
Q Switching
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