scholarly journals Quantum dot amplifiers with high output power and low noise

2003 ◽  
Vol 82 (18) ◽  
pp. 3083-3085 ◽  
Author(s):  
Tommy W. Berg ◽  
Jesper Mørk
Keyword(s):  
Quantum Dot ◽  
Output Power ◽  
Low Noise ◽  
High Output Power ◽  
High Output

scholarly journals Performance of Efficient CMOS Power Amplifier for ISM Band Applications

2019 ◽  
Vol 9 (2) ◽  
pp. 4579-4584
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Power Amplifiers ◽  
State Of The Art ◽  
Low Noise ◽  
High Output Power ◽  
Ism Band ◽  
Functional Blocks ◽  
Noise Amplifier ◽  
High Output

Power amplifiers are one of the most important functional blocks in the Radio Frequency (RF) frontend for reliable wireless communications. The power amplifiers amplify and boost the input signal to needed output power. The signal is amplified to create it sufficiently high for the transmitter to propagate the needed distance to the receiver. Such as power amplifiers are expected to need low-power communication while producing a relatively high output power with more efficiency. The trans-receiver has various blocks such as filters, Voltage Control Oscillator (VCO), Low Noise Amplifier (LNA) and power amplifier. Among these, the most power hungry device is a power amplifier. The efficiency of the power amplifier can be 100%, but practically it is just 55%. So, the scope of improvement in efficiency in a power amplifier will be an interesting and most challenging task. As well defined architecture, including linear functional block synthesis, which is complex in designing CMOS power amplifier for different applications. This article describes the different state-of-the-art design biasing class and advanced RF CMOS power amplifier for Industrial, Scientific, and Medical (ISM) band applications.

A 1.2 V CMOS COMMON-GATE LOW NOISE AMPLIFIER FOR UWB WIRELESS COMMUNICATIONS

2013 ◽  
Vol 22 (07) ◽  
pp. 1350052 ◽  
Author(s):  
HOSEIN ALAVI-RAD ◽  
SOHEYL ZIABAKHSH ◽  
MUSTAPHA C. E. YAGOUB
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Supply Voltage ◽  
Wide Band ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wide Band ◽  
Band Frequency ◽  
Common Gate ◽  
Noise Amplifier

In this paper, an ultra-wide band 0.18 μm CMOS common-gate low-noise amplifier (LNA) is presented. Designed in the ultra-wide band frequency range of 3.1–10.6 GHz, it uses a current-reused technique with modified input matching. This approach allowed obtaining a flat broadband gain of 12.75 ± 0.83 dB with an input reflection coefficient less than -5.5 dB, an output reflection coefficient less than -7 dB, and a noise figure less than 3.7 dB. Furthermore, the proposed low-power LNA consumes only 12.14 mW (excluding buffer) from a 1.2 V supply voltage.

Sign in / Sign up

Export Citation Format

Share Document