Development of an optimization algorithm for simulation of medium voltage networks reliability performance

2011 ◽  
Author(s):  
A. Violin ◽  
V.G.C. Telles ◽  
H.R.P.M. de Oliveira ◽  
M.S. Silveira ◽  
M.L.B. Martinez
Keyword(s):  
Optimization Algorithm ◽  
Medium Voltage ◽  
Reliability Performance

Teaching Reliability Analysis of HV/MV Substations and Distribution Feeders Using Educational Software

2012 ◽  
Vol 49 (4) ◽  
pp. 365-382
Author(s):  
Pedro J. Martínez-Lacañina ◽  
José L. Martínez-Ramos ◽  
Alfonso Bachiller-Soler ◽  
Darío Monroy-Berjillos
Keyword(s):  
Educational Software ◽  
Electrical Power ◽  
Graphical Interface ◽  
Electrical Power System ◽  
System Operation ◽  
Reliability Indices ◽  
Medium Voltage ◽  
The Monte Carlo Method ◽  
Reliability Performance ◽  
Students Satisfaction

In this paper, educational software for the reliability assessment of high/medium-voltage (HV/MV) substations and distribution feeders is presented. It is a useful tool for learning the utility of reliability indices of the HV/MV substations and their distribution feeders, and their influence on the electrical power system operation. By means of an interactive graphical interface, multiple configurations of HV/MV substation layouts can be selected. The Monte Carlo method and the equipment outages have been used to calculate the expected reliability performance of substations and primary distribution feeders. The proposed educational tool has been evaluated to measure students' satisfaction, and questionnaire and results of this evaluation are presented and discussed.

Use of an optimization algorithm in designing medium-voltage switchgear insulation elements

2006 ◽  
Vol 42 (4) ◽  
pp. 1347-1350 ◽  
Author(s):  
P. Kitak ◽  
J. Pihler ◽  
I. Ticar ◽  
A. Stermecki ◽  
C. Magele ◽  
...  
Keyword(s):  
Optimization Algorithm ◽  
Medium Voltage ◽  
Medium Voltage Switchgear

Prospects for convergent beam electron diffraction with a 200kV cold field-emission transmission electron microscope

1991 ◽  
Vol 49 ◽  
pp. 466-467
Author(s):  
J W Steeds ◽  
R Vincent
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Small Diameter ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Medium Voltage ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Special Modification ◽  
Convergent Beam

We review the analytical powers which will become more widely available as medium voltage (200-300kV) TEMs with facilities for CBED on a nanometre scale come onto the market. Of course, high performance cold field emission STEMs have now been in operation for about twenty years, but it is only in relatively few laboratories that special modification has permitted the performance of CBED experiments. Most notable amongst these pioneering projects is the work in Arizona by Cowley and Spence and, more recently, that in Cambridge by Rodenburg and McMullan.There are a large number of potential advantages of a high intensity, small diameter, focussed probe. We discuss first the advantages for probes larger than the projected unit cell of the crystal under investigation. In this situation we are able to perform CBED on local regions of good crystallinity. Zone axis patterns often contain information which is very sensitive to thickness changes as small as 5nm. In conventional CBED, with a lOnm source, it is very likely that the information will be degraded by thickness averaging within the illuminated area.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

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