scholarly journals Reliable SRAM using NAND‐NOR Gate in beyond‐CMOS QCA technology

2021 ◽  
Vol 15 (3) ◽  
pp. 202-213
Author(s):  
Marshal Raj ◽  
Lakshminarayanan Gopalakrishnan ◽  
Seok‐Bum Ko
Keyword(s):  
Nor Gate ◽  
Beyond Cmos

Brain-Inspired Computing: Adventure from Beyond CMOS Technologies to Beyond von Neumann Architectures ICCAD Special Session Paper

2021 ◽  
Author(s):  
Hussam Amrouch ◽  
Jian-Jia Chen ◽  
Kaushik Roy ◽  
Yuan Xie ◽  
Indranil Chakraborty ◽  
...  
Keyword(s):  
Special Session ◽  
Von Neumann ◽  
Session Paper ◽  
Beyond Cmos

scholarly journals Physical Simulations of High Speed and Low Power NanoMagnet Logic Circuits

2018 ◽  
Vol 8 (4) ◽  
pp. 37 ◽  
Author(s):  
Giovanna Turvani ◽  
Laura D’Alessandro ◽  
Marco Vacca
Keyword(s):  
High Speed ◽  
Logic Circuits ◽  
Micromagnetic Simulations ◽  
Electrical Fields ◽  
Nanomagnet Logic ◽  
Nanomagnetic Logic ◽  
Elastic Effect ◽  
Physical Simulations ◽  
A Chain ◽  
Beyond Cmos

Among all “beyond CMOS” solutions currently under investigation, nanomagnetic logic (NML) technology is considered to be one of the most promising. In this technology, nanoscale magnets are rectangularly shaped and are characterized by the intrinsic capability of enabling logic and memory functions in the same device. The design of logic architectures is accomplished by the use of a clocking mechanism that is needed to properly propagate information. Previous works demonstrated that the magneto-elastic effect can be exploited to implement the clocking mechanism by altering the magnetization of magnets. With this paper, we present a novel clocking mechanism enabling the independent control of each single nanodevice exploiting the magneto-elastic effect and enabling high-speed NML circuits. We prove the effectiveness of this approach by performing several micromagnetic simulations. We characterized a chain of nanomagnets in different conditions (e.g., different distance among cells, different electrical fields, and different magnet geometries). This solution improves NML, the reliability of circuits, the fabrication process, and the operating frequency of circuits while keeping the energy consumption at an extremely low level.

A Survey on Architecture Advances Enabled by Emerging Beyond-CMOS Technologies

2019 ◽  
Vol 36 (3) ◽  
pp. 46-68 ◽  
Author(s):  
An Chen ◽  
Supriyo Datta ◽  
X. Sharon Hu ◽  
Michael T. Niemier ◽  
Tajana Simunic Rosing ◽  
...  
Keyword(s):  
Beyond Cmos

scholarly journals Charge-Resistance Approach to Benchmarking Performance of Beyond-CMOS Information Processing Devices

2014 ◽  
Vol 13 (1) ◽  
pp. 143-150 ◽  
Author(s):  
Angik Sarkar ◽  
Dmitri E. Nikonov ◽  
Ian. A. Young ◽  
Behtash Behin-Aein ◽  
Supriyo Datta
Keyword(s):  
Information Processing ◽  
Resistance Approach ◽  
Beyond Cmos ◽  
Benchmarking Performance

Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: nor Gate Application

2009 ◽  
Vol 30 (1) ◽  
pp. 30-32 ◽  
Author(s):  
C.H. Park ◽  
K.H. Lee ◽  
M.S. Oh ◽  
K. Lee ◽  
S. Im ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Dual Gate ◽  
Nor Gate
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