The effect of the moving boundary on molecular diffusion controlled dissolution or growth kinetics

1962 ◽  
Vol 58 ◽  
pp. 2468 ◽  
Author(s):  
A. R. Cooper
2014 ◽  
Vol 513-517 ◽  
pp. 56-59
Author(s):  
Li Xin Li ◽  
Jun Liang Zhao ◽  
Xue Mao Guan

The crystal growth kinetics in the deeply undercooled Zr50Cu50 melt was studied with the electromagnetic levitation technique. The maximum growth rate umax was, for the first time, demonstrated in undercooled metal and alloy melts, and this allowed us to construct the complete profile of crystal growth kinetics in the whole undercooling region of Zr50Cu50 melt. In deep undercooling region near glass transition, the diffusion-controlled crystal growth mechanism accounted for the growth kinetics, while at lower undercooling the profile around umax remarkably differed from what the classical growth theory covers.


2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Chung-Yung Lin

Purpose This paper aims to derive a model of growth kinetics of the intermetallic compound (IMC) layer formed in the reaction between liquid Sn-based solders and Ni particle reinforcements and to compare with the experimental data to verify the effects of Sn concentration and alloying element. Design/methodology/approach A composite solder was manufactured by mechanically introducing Ni particle reinforcements into a solder matrix. The effect of the non-reactive alloying elements, Ag, Pb and Bi, on the growth kinetics of the IMC formed between liquid Sn-based eutectic solders and Ni particles, reacting this composite solder at 250°C–280°C was studied. Findings Experimental results showed that only the IMC Ni3Sn4 was present as a reaction product. Using the diffusion-controlled reaction mechanism, a kinetic equation quantifying both Sn concentration and alloying element effects was derived and verified by comparing the kinetic data obtained using four different solders with different concentrations of Sn and the alloying elements. Originality/value The similarity between the activation energies of these four solders confirms that the diffusion of Sn atoms through the IMC is the rate-controlling step. Besides, the kinetic values are independent of the geometry of Ni, whether spherical particle or flat substrate.


2007 ◽  
Vol 558-559 ◽  
pp. 1227-1236 ◽  
Author(s):  
Shen J. Dillon ◽  
Martin P. Harmer

The grain growth kinetics of silica and calcia doped alumina at 1400oC and their grain boundary complexion is characterized. These data are compared to predictions of both diffusion controlled and nucleation limited interface controlled grain growth theory. It is deduced from the indicators that the mechanism for normal and abnormal grain growth in these aluminas is diffusion controlled.


2003 ◽  
Vol 2003 (3) ◽  
pp. 144-146 ◽  
Author(s):  
Francisco José Alguacil

Cadmium(II) adsorption from aqueous sulphate medium on Lewatit TP260 cationic (di-Na+) ion exchange resin was investigated. The influence of operating variables such as aqueous pH, metal concentration, time and temperature on the equilibrium parameters was studied. Cadmium(II) adsorption on the resin can described by the Langmuir equation, whereas cadmium(II) uptake is particle diffusion controlled. The moving boundary particle diffusion model only fits the initial metal adsorption on the resin.


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