Surface ion effects in the dielectric properties of adsorbed water films

1960 ◽  
Vol 56 ◽  
pp. 1656 ◽  
Author(s):  
B. J. Goldsmith ◽  
J. Muir
1981 ◽  
Vol 82 (2) ◽  
pp. 534-542 ◽  
Author(s):  
Reinhold Badmann ◽  
Norbert Stockhausen ◽  
Max Josef Setzer

2009 ◽  
Vol 1203 ◽  
Author(s):  
Vidhya Chakrapani ◽  
John C. Angus ◽  
Kathleen Kash ◽  
Alfred B. Anderson ◽  
Sharvil Desai ◽  
...  

AbstractThe oxygen redox couple in adsorbed water films acts as an “electrochemical ground” that tends to pin the Fermi level in solids at the electrochemical potential of the redox couple. We discuss this effect on the conductivity of diamond; the conductivity type of sp2-based carbons including single-walled, semiconducting carbon nanotubes and graphene; the photoluminescence of GaN and ZnO; and the contact charging of metals.


2014 ◽  
Vol 20 (12) ◽  
pp. 3376-3383 ◽  
Author(s):  
Youngsoon Kim ◽  
Sunghwan Shin ◽  
Eui-Seong Moon ◽  
Heon Kang

2018 ◽  
Vol 9 (17) ◽  
pp. 4988-4994 ◽  
Author(s):  
Quin R. S. Miller ◽  
Eugene S. Ilton ◽  
Odeta Qafoku ◽  
David A. Dixon ◽  
Monica Vasiliu ◽  
...  

Author(s):  
Jing-jiang Yu ◽  
T. Yamaoka ◽  
S. Hasumura ◽  
R. Hirose ◽  
K. Ando ◽  
...  

Abstract Scanning nonlinear dielectric microscopy (SNDM) has improved significantly, achieving low-concentrated observations. Therefore, it is of great interest to observe how adsorbed water and other measurement environments influence SNDM measurements so that the material's dielectric properties can be detected. This study investigates how specific measurement environments, namely air, dry nitrogen, and vacuum environments, influence the SNDM and C-V curve measurements of semiconductor samples. The p-n structure created by ion implantation was measured by applied-DC-voltage SNDM, and in these environments, the corresponding C-V curves were obtained. As with the p-n structure sample, an abnormal result was obtained when a positive DC voltage was applied to an epi-Si sample in air. A low concentration level was clearly measured in vacuum. From these results, it can be concluded that measurement in a high vacuum is an effective way to obtain highly precise carrier distributions.


1986 ◽  
Author(s):  
Pierre Bernard ◽  
Pierre-Andre Belanger ◽  
Russel Boulay ◽  
Bernard Drouin ◽  
Richard Gagnon

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