Characterization of a helium discharge for hollow anode furnace atomization non-thermal excitation spectrometry

1993 ◽  
Vol 8 (7) ◽  
pp. 945 ◽  
Author(s):  
Philip G. Riby ◽  
James M. Harnly
Keyword(s):  
Thermal Excitation ◽  
Hollow Anode ◽  
Furnace Atomization ◽  
Helium Discharge

scholarly journals Design and Characterization of a Helium-Discharge Ionization Detector for Gas Chromatography.

1996 ◽  
Vol 12 (2) ◽  
pp. 195-200 ◽  
Author(s):  
Jin-Chun WOO ◽  
Dong-Min MOON ◽  
Hiroshi KAWAGUCHI
Keyword(s):  
Gas Chromatography ◽  
Ionization Detector ◽  
Helium Discharge

Characterization of a micro-helium discharge detector for gas chromatography

2015 ◽  
Vol 206 ◽  
pp. 190-197 ◽  
Author(s):  
Shree Narayanan ◽  
Gary Rice ◽  
Masoud Agah
Keyword(s):  
Gas Chromatography ◽  
Helium Discharge

Characterization of CdTe and HgCdTe by Photo-Thermal Excitation Spectroscopy

2009 ◽  
Vol 38 (8) ◽  
pp. 1533-1538
Author(s):  
Robert Furstenberg ◽  
Michael R. Papantonakis ◽  
C.A. Kendziora
Keyword(s):  
Thermal Excitation

Characterization of Few layer Tungsten diselenide based FET under Thermal Excitation

MRS Advances ◽  
2017 ◽  
Vol 2 (60) ◽  
pp. 3721-3726
Author(s):  
Avra S Bandyopadhyay ◽  
Gustavo A. Saenz ◽  
Anupama Kaul
Keyword(s):  
Optical Excitation ◽  
Optical Microscope ◽  
Thermal Excitation ◽  
Two Dimensional ◽  
Tungsten Diselenide ◽  
Back Gate ◽  
Direct Bandgap ◽  
Wide Range ◽  
Two Dimensional Materials

Abstract:Two-dimensional (2D) materials are very promising with respect to their integration into optoelectronic devices. Monolayer tungsten diselenide (WSe2) is a direct-gap semiconductor with a bandgap of ∼1.6eV, and is therefore a complement to other two-dimensional materials such as graphene, a gapless semimetal, and boron nitride, an insulator. The direct bandgap distinguishes monolayer WSe2 from its bulk and bilayer counterparts, which are both indirect gap materials with smaller bandgaps. This sizable direct bandgap in a two-dimensional layered material enables a host of new optical and electronic devices. In this work, a comprehensive analysis of the effect of optical excitation on the transport properties in few-layer WSe2 is studied. Monolayer WSe2 flakes from natural WSe2 crystals were transferred onto Si/SiO2 (270nm) substrates by mechanical exfoliation. The flakes were observed under an optical microscope. A FET based on mechanically exfoliated WSe2 was fabricated using photolithography with Molybdenum as metal contact and Silicon as back gate and the electronic properties were measured in a wide range of temperatures. The mobility of our device was found to be 0.2 cm /V-S at room temperature. The schottky barrier height was found to decrease from 80 meV to 25 meV as the gate voltage increases.

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