Co-ordination chemistry of mixed pyridine–phenol and phenanthroline–phenol ligands; a variable-temperature electron paramagnetic resonance and magnetic susceptibility study on two binuclear copper(II) complexes with Cu2(µ-O)2(µ-1,3,-O2CMe) cores

1992 ◽  
pp. 3353-3356 ◽  
Author(s):  
John P. Maher ◽  
Philip H. Rieger ◽  
Peter Thornton ◽  
Michael D. Ward
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Susceptibility ◽  
Variable Temperature ◽  
Binuclear Copper ◽  
Paramagnetic Resonance ◽  
Susceptibility Study ◽  
Temperature Electron ◽  
Electron Paramagnetic ◽  
Magnetic Susceptibility Study

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

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