HeI photoelectron spectroscopy of small molecules adsorbed on metal surfaces

1974 ◽  
Vol 58 ◽  
pp. 106 ◽  
Author(s):  
P. Biloen ◽  
A. A. Holscher
Keyword(s):  
Small Molecules ◽  
Photoelectron Spectroscopy ◽  
Metal Surfaces

Mass Selected ZEKE-Spectra of FeC2-Anions: A Spectroscopic Access to Intermediates in Catalytic Reactions of Hydrocarbons on Metal Surfaces

1994 ◽  
Vol 49 (12) ◽  
pp. 1256-1258 ◽  
Author(s):  
G. Drechsler ◽  
C. Bäßmann ◽  
U. Boesl ◽  
E. W. Schlag
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Metal Surfaces ◽  
Catalytic Reactions ◽  
Photoelectron Spectra ◽  
Mass Analyzer ◽  
Flight Mass Spectrometry ◽  
New Information ◽  
Zero Kinetic Energy ◽  
Conventional Laser

Abstract Zero-kinetic-energy (ZEKE) photoelectron spectra of metalcarbide anions are presented, allowing a high resolu­tion spectroscopic access to intermediates in catalytic reac­tions of hydrocarbons on metal surfaces. As a first compound, FeC2 (an intermediate of the iron/acetylene system) has been chosen. Important for successful ZEKE spectroscopy was a special anion source and the selection by time-of-flight mass spectrometry. In addition, conventional laser induced photo­ detachment photoelectron spectroscopy in combination with our anion source and mass analyzer delivered valuable new information.

Built-in Potential of a Pentacene Pin Homojunction Studied by Ultraviolet Photoemission Spectroscopy

2010 ◽  
Vol 1270 ◽  
Author(s):  
Selina Olthof ◽  
Hans Kleemann ◽  
Björn Lüssem ◽  
Karl Leo
Keyword(s):  
Small Molecules ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Organic P ◽  
Band Bending ◽  
Silver Substrate ◽  
N Doping ◽  
Ultraviolet Photoemission Spectroscopy

AbstractIn this paper we investigate the energetic alignment in an organic p-i-n homojunction using ultraviolet photoelectron spectroscopy. The device is made of pentacene and we emploay the small molecules NDN1 for n-doping and NDP2 for p-doping the layers. The full p-i-n structure is deposited stepwise on a silver substrate to learn about the interface dipoles and band bending effects present in the device. From the change in work function between the p- and n-doped layers we gain knowledge of the built-in potential of this junction.

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