scholarly journals Polymer source-gated transistors with low saturation voltage

2022 ◽  
Author(s):  
Stamatis Georgakopoulos ◽  
Radu Sporea ◽  
Maxim Shkunov
Keyword(s):  
Schottky Barrier ◽  
Conjugated Polymer ◽  
Effective Height ◽  
Polymer Semiconductor

A type of injection-limited transistor is demonstrated with a conjugated polymer semiconductor and fluoropolymer insulator. The Source-Gated Transistor (SGT) is based on a source Schottky barrier, the effective height of...

scholarly journals A high-spin ground-state donor-acceptor conjugated polymer

2019 ◽  
Vol 5 (5) ◽  
pp. eaav2336 ◽  
Author(s):  
A. E. London ◽  
H. Chen ◽  
M. A. Sabuj ◽  
J. Tropp ◽  
M. Saghayezhian ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
High Spin ◽  
Ground State ◽  
Conjugated Polymer ◽  
Organic Materials ◽  
Energy Gap ◽  
Light Element ◽  
Paramagnetic Resonance ◽  
Practical Applications ◽  
Polymer Semiconductor

Interest in high-spin organic materials is driven by opportunities to enable far-reaching fundamental science and develop technologies that integrate light element spin, magnetic, and quantum functionalities. Although extensively studied, the intrinsic instability of these materials complicates synthesis and precludes an understanding of how fundamental properties associated with the nature of the chemical bond and electron pairing in organic materials systems manifest in practical applications. Here, we demonstrate a conjugated polymer semiconductor, based on alternating cyclopentadithiophene and thiadiazoloquinoxaline units, that is a ground-state triplet in its neutral form. Electron paramagnetic resonance and magnetic susceptibility measurements are consistent with a high-to-low spin energy gap of 9.30 × 10−3 kcal mol−1. The strongly correlated electronic structure, very narrow bandgap, intramolecular ferromagnetic coupling, high electrical conductivity, solution processability, and robust stability open access to a broad variety of technologically relevant applications once thought of as beyond the current scope of organic semiconductors.

scholarly journals Charge transport in conjugated polymer–semiconductor nanoparticle composite near the percolation threshold

2017 ◽  
Vol 123 (12) ◽  
Author(s):  
L. S. Cardoso ◽  
G. E. Gonçalves ◽  
D. H. F. Kanda ◽  
R. F. Bianchi ◽  
H. N. Nagashima
Keyword(s):  
Charge Transport ◽  
Percolation Threshold ◽  
Conjugated Polymer ◽  
Semiconductor Nanoparticle ◽  
Polymer Semiconductor

A pseudo-two-dimensional conjugated polysquaraine: an efficient p-type polymer semiconductor for organic photovoltaics and perovskite solar cells

2018 ◽  
Vol 6 (28) ◽  
pp. 13644-13651 ◽  
Author(s):  
Qi Xiao ◽  
Fei Wu ◽  
MengMeng Han ◽  
Zhen Li ◽  
LinNa Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conjugated Polymer ◽  
Polymer Solar Cells ◽  
Perovskite Solar Cells ◽  
Two Dimensional ◽  
Free Hole ◽  
Polymer Semiconductor ◽  
Hole Transporting ◽  
Hole Transporting Material ◽  
P Type

A new squaraine-based 2D conjugated polymer was developed as the donor material in polymer solar cells and dopant-free hole transporting material in inverted perovskite solar cells, reaching efficiencies of 6.35% and 18.29%, respectively.

Anisotropy of Charge Transport in a Uniaxially Aligned and Chain-Extended, High-Mobility, Conjugated Polymer Semiconductor

2011 ◽  
Vol 21 (5) ◽  
pp. 932-940 ◽  
Author(s):  
Mi Jung Lee ◽  
Dhritiman Gupta ◽  
Ni Zhao ◽  
Martin Heeney ◽  
Iain McCulloch ◽  
...  
Keyword(s):  
Charge Transport ◽  
Conjugated Polymer ◽  
High Mobility ◽  
Polymer Semiconductor

scholarly journals Synthesis of Metal-Polymer-Semiconductor Diode Using Polyaniline by Chemical Oxidative Method and its Temperature Dependent Electrical Conductivity Behaviour

2019 ◽  
Vol 31 (12) ◽  
pp. 2846-2854
Author(s):  
E. Shoba ◽  
N. Pasupathy ◽  
P. Thirunavukkarasu ◽  
J. Chandrasekaran ◽  
G. Parthasarathy
Keyword(s):  
Schottky Barrier ◽  
Polymerization Reaction ◽  
Semiconductor Diode ◽  
Polymerization Temperature ◽  
Band Formation ◽  
Ammonium Peroxydisulfate ◽  
Polymer Semiconductor ◽  
Stirring Time ◽  
Temperature Ranges ◽  
Metal Polymer

The interfacial layer of pristine polyaniline (PANI) polymer was prepared using chemical oxidative method with 0.2 M concentration formerly, aniline hydrochloride was oxidized with ammonium peroxydisulfate 0.25 M in aqueous medium at 1-2 ºC next to aniline, stirring time and polymerization temperature are considerable causing parameters of polymerization reaction, harmoniously metal polymer- semiconductor (MPS) constructions of Cu/PANI/n-Si Schottky barrier diodes with different acids (HCl, acetic acid, nitric acid and sulfuric acid) was fabricated. The structural analyses of XRD sizes of the elements revealed that the crystal structure of distortion and converted into amorphous nature and SEM revealed that the morphology of pristine PANI powders. The FT-IR spectra confirmed that ammonium peroxydisulfate with pristine PANI along with band formation. The optical property of PANI was analyzed using UV-vis spectra and deliberate with minimum band gap 3.1 eV by means of HCl. The electrical property I -V temperature ranges 30 to 120 ºC represents that the maximum average conductivity obtains as 0.70 × 10-2 S/cm for 0.2 M HCl. The lowest ideality factor (n) and minimum barrier height (ΦB) values were achieved for HCl of Cu/PANI/n-Si Schottky barrier diode (SBDs) under the explanation disorder.

Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode

2016 ◽  
Vol 221 ◽  
pp. 169-175 ◽  
Author(s):  
Lih Wei Lim ◽  
Fakhra Aziz ◽  
Fahmi F. Muhammad ◽  
Azzuliani Supangat ◽  
Khaulah Sulaiman
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Polymer Semiconductor ◽  
Metal Polymer
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