Single crystal field-effect transistor of tetrabenzoporphyrin with a one-dimensionally extended columnar packing motif exhibiting efficient charge transport properties

2021 ◽  
Author(s):  
Juanjuan Zhu ◽  
Hironobu Hayashi ◽  
Meng Chen ◽  
Chengyi Xiao ◽  
Kyohei Matsuo ◽  
...  
Keyword(s):  
Metal Complexes ◽  
Single Crystal ◽  
Charge Transport ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Hole Mobility ◽  
Crystal Field Effect ◽  
Efficient Charge ◽  
Effect Transistor

The single crystal field-effect transistor of 5,15-bis(triisopropylsilyl)ethynyltetrabenzoporphyrin exhibited better hole mobility than its metal complexes, with efficient charge transport through π–π stacking along tetrabenzoporphyrin units.

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator

2006 ◽  
Vol 89 (15) ◽  
pp. 152110 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Katsumi Tanigaki ◽  
Taishi Takenobu ◽  
Yoshihiro Iwasa ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Crystal Field Effect ◽  
High K ◽  
Effect Transistor

Synthesis of planar dibenzo[de,op]bistetracene derivatives for organic field-effect transistor applications: substituent effect on crystal packing and charge transport property

2015 ◽  
Vol 3 (29) ◽  
pp. 7583-7588 ◽  
Author(s):  
Tien-Lin Wu ◽  
Chi-Hsien Kuo ◽  
Bo-Chao Lin ◽  
Yu-Tai Tao ◽  
Chao-Ping Hsu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Charge Transport ◽  
Transport Property ◽  
Substituent Effect ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Crystal Packing ◽  
Hole Mobility ◽  
Electronic Coupling ◽  
Effect Transistor

A series of dibenzo[de,op]bistetracene derivatives is synthesized and their single-crystal FET devices show a hole mobility from 0.045 cm2 V−1 s−1 up to 1.19 cm2 V−1 s−1, due to the effect of substituents on the crystal packing/electronic coupling.

Single Crystal Field Effect Transistor of a Y-Shaped Ladder-Type Oligomer

2008 ◽  
Vol 112 (21) ◽  
pp. 7968-7971 ◽  
Author(s):  
Phuong-T. T. Pham ◽  
Yu Xia ◽  
C. Daniel Frisbie ◽  
Mamoun M. Bader
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Crystal Field Effect ◽  
Effect Transistor
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