Two-Dimensional Solid-Phase Crystallization toward Centimeter-Scale Monocrystalline Layered MoTe2 via Two-Step Annealing

Author(s):  
Chih-Pin Lin ◽  
Hao-Hua Hsu ◽  
Jyun-Hong Huang ◽  
Yu-Wei Kang ◽  
Chien-Ting Wu ◽  
...  

The lack of effective synthesis techniques for achieving wafer-scale uniformity and high crystallinity remains one of the major obstacles for two-dimensional (2D) layered materials in practical applications. 2D solid-phase crystallization...

1990 ◽  
Vol 182 ◽  
Author(s):  
Ichio Yudasaka ◽  
Hiroyuki Ohshima

AbstractPolysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high temperature processing. Alternative technologies to thermal oxidation are very low pressure deposition, solid-phase crystallization, laser-annealing and hydrogenation. These technologies are compatible with low temperature processing and will contribute to the advance of polysilicon thin film transistors in the future.


MRS Advances ◽  
2020 ◽  
Vol 5 (64) ◽  
pp. 3437-3452
Author(s):  
Rui Chen ◽  
Jinhua Cao ◽  
Stephen Gee ◽  
Yin Liu ◽  
Jie Yao

AbstractTwo-dimensional (2D) layered materials hosting dislocations have attracted considerable research attention in recent years. In particular, screw dislocations can result in a spiral topology and an interlayer twist in the layered materials, significantly impacting the stacking order and symmetry of the layers. Moreover, the dislocations with large strain and heavily distorted atomic registry can result in a local modification of the structures around the dislocation. The dislocations thus provide a useful route to engineering optical, electrical, thermal, mechanical and catalytic properties of the 2D layered materials, which show great potential to bring new functionalities. This article presents a comprehensive review of the experimental and theoretical progress on the growth and properties of the dislocated 2D layered materials. It also offers an outlook on the future works in this promising research field.


NANO ◽  
2018 ◽  
Vol 13 (12) ◽  
pp. 1850138
Author(s):  
Seungwook Son ◽  
Dongwook Kim ◽  
Sutassana Na-Phattalung ◽  
Jisoon Ihm

Two-dimensional (2D) or layered materials have a great potential for applications in energy storage, catalysis, optoelectronics and gas separation. Fabricating novel 2D or quasi-2D layered materials composed of relatively abundant and inexpensive atomic species is an important issue for practical usage in industry. Here, we suggest the layer-structured AlOOH (Boehmite) as a promising candidate for such applications. Boehmite is a well-known layer-structured material and a single-layer can be exfoliated from the bulk boehmite by breaking the interlayer hydrogen bonding. We study atomic and electronic band structures of both bulk and single-layer boehmite, and also obtain the single-layer exfoliation energy using first-principles calculations.


2014 ◽  
Vol 92 (7/8) ◽  
pp. 576-581 ◽  
Author(s):  
Mikuri Kanai ◽  
Yuji Kojima ◽  
Masao Isomura

We have investigated the preparation of crystalline germanium films by the solid phase crystallization (SPC) of amorphous germanium (a-Ge) precursor on single crystalline silicon substrates. The a-Ge precursor easily incorporates the impurities from the surface exposed to the air, and the impurities affect the crystallinity after the SPC. In the a-Ge precursor prepared by Knudsen-cell evaporation, the preferential crystalline growth following the Si substrates is disturbed by the high density of impurities and the random crystalline structures are formed. The a-Ge precursors prepared by electron beam evaporation have high impurity concentrations only near the surface because the impurity diffusion is slow because of the relatively high density. The preferential growth is successfully obtained in a-Ge precursor prepared on n-type Si substrates, although the random crystallization is slightly observed on p-type Si substrates. By sufficiently reducing the impurity concentrations by avoiding the air exposure, the preferential growth can be promoted on p-type Si substrates. The impurity incorporation because of the air exposure is sufficiently reduced for the preferential growth by covering a-Ge with a-Si blocking layers. This method is effective for future practical applications of SPC Ge films.


Author(s):  
Manoj K. Jana ◽  
C. N. R. Rao

The discovery of graphene marks a major event in the physics and chemistry of materials. The amazing properties of this two-dimensional (2D) material have prompted research on other 2D layered materials, of which layered transition metal dichalcogenides (TMDCs) are important members. Single-layer and few-layer TMDCs have been synthesized and characterized. They possess a wide range of properties many of which have not been known hitherto. A typical example of such materials is MoS 2 . In this article, we briefly present various aspects of layered analogues of graphene as exemplified by TMDCs. The discussion includes not only synthesis and characterization, but also various properties and phenomena exhibited by the TMDCs. This article is part of the themed issue ‘Fullerenes: past, present and future, celebrating the 30th anniversary of Buckminster Fullerene’.


2020 ◽  
Vol 2 (2) ◽  
Author(s):  
Haihua HUANG ◽  
Xiaofeng FAN

Thermoelectric technologies have caught our intense attention due to their ability of heat conversion into electricity. The considerable efforts have been taken to develop and enhance thermoelectric properties of materials over the past several decades. Recently, two-dimensional layered materials are making the promise for potential applications of thermoelectric devices because of the excellent physical and structural properties. Here, a comprehensive coverage about recent progresses in thermoelectric properties of typical two dimensional (2D) layered materials, including the theoretical and experimental results, is provided. Moreover, the potential applications of 2D thermoelectric materials are also involved. These results indicate that the development of 2D thermoelectric materials take a key role in the flexible electronic devices with thermoelectric technologies.


2019 ◽  
Vol 1 (7) ◽  
pp. 2606-2611 ◽  
Author(s):  
Xuan-Ze Li ◽  
Yi-Fan Wang ◽  
Jing Xia ◽  
Xiang-Min Meng

Vertical heterostructures based on two-dimensional (2D) layered materials are ideal platforms for electronic structure engineering and novel device applications.


2019 ◽  
Vol 5 (6) ◽  
pp. eaax0390 ◽  
Author(s):  
Junseong Song ◽  
Hyun Yong Song ◽  
Zhen Wang ◽  
Seokhee Lee ◽  
Jae-Yeol Hwang ◽  
...  

The discovery of new families, beyond graphene, of two-dimensional (2D) layered materials has always attracted great attention. However, it has been challenging to artificially develop layered materials with honeycomb atomic lattice structure composed of multicomponents such as hexagonal boron nitride. Here, through the dimensional manipulation of a crystal structure from sp3-hybridized 3D-ZnSb, we create an unprecedented layered structure of Zintl phase, which is constructed by the staking of sp2-hybridized honeycomb ZnSb layers. Using structural analysis combined with theoretical calculation, it is found that the 2D-ZnSb has a stable and robust layered structure. The bidimensional polymorphism is a previously unobserved phenomenon at ambient pressure in Zintl families and can be a common feature of transition metal pnictides. This dimensional manipulation of a crystal structure thus provides a rational design strategy to search for new 2D layered materials in various compounds, enabling unlimited expansion of 2D libraries and corresponding physical properties.


2017 ◽  
Vol 46 (17) ◽  
pp. 5400-5424 ◽  
Author(s):  
Jun Gao ◽  
Yaping Feng ◽  
Wei Guo ◽  
Lei Jiang

This review highlights the recent progress, current challenges, and future perspectives in the design and application of 2D layered materials for nanofluidic research, with emphasis on the thought of bio-inspiration.


Author(s):  
Abhinandan Patra ◽  
Mahendra A More ◽  
Dattatray J Late ◽  
Chandra Sekhar Rout

2D layered materials are widely regarded as the revolutionary class of materials and hold great promises in the modern device technology industries. 2D materials family covers almost the entire spectrum...


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